Present Status of Impurity Free Vacancy Disordering Research and Application

Tao, 林涛 Lin; Hang, 孙航 Sun; Haoqing, 张浩卿 Zhang; Nan, 林楠 Lin; Xiaoyu, 马骁宇 Ma; Yonggang, 王勇刚 Wang

doi:10.3788/lop52.030003

Cited by 1 publication

(1 citation statement)

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“…Both the upper and lower waveguide layers contain a large number of Ga and As components, based on which the deformation state of the epitaxial layer is calculated by the deformation state of the GaAs substrate; that is, assuming the 4.5 μm epitaxial layer is an entirety and the substrate thickness is 20 μm. By employing this approach, we can avoid the calculation error caused by the large relative tolerance [15] . Then, the epitaxial layer is covered with 200 nm SiO 2 .…”

Section: Stress and Strain Caused By Thermal Annealingmentioning

confidence: 99%

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

He,

Liu,

et al. 2023

J. Semicond.

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Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.

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Section: Stress and Strain Caused By Thermal Annealingmentioning

confidence: 99%