Pressure and temperature dependence of the first-order Raman mode of diamond

Tardieu, André; Cansell, François; Petitet, J. P.

doi:10.1063/1.346375

Cited by 61 publications

(30 citation statements)

References 15 publications

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“…If so, the pressure shift of the F 2g phonon frequency, also studied by Occelli et al up to 140 GPa, should be affected in a similar manner. The F 2g phonon mode behavior at high pressures was frequently studied by Raman spectroscopy 1,2,3,4,5,15,16,17,18,19,20 and its possible role in pressure calibration was addressed early on.…”

Section: 234mentioning

confidence: 99%

Equation of state and phonon frequency calculations of diamond at high pressures

2003

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The pressure-volume relationship and the zone-center optical phonon frequency of cubic diamond at pressures up to 600 GPa have been calculated based on Density Functional Theory within the Local Density Approximation and the Generalized Gradient Approximation. Three different approaches, viz. a pseudopotential method applied in the basis of plane waves, an all-electron method relying on Augmented Plane Waves plus Local Orbitals, and an intermediate approach implemented in the basis of Projector Augmented Waves have been used. All these methods and approximations yield consistent results for the pressure derivative of the bulk modulus and the volume dependence of the mode Grüneisen parameter of diamond. The results are at variance with recent precise measurements up to 140 GPa. Possible implications for the experimental pressure determination based on the ruby luminescence method are discussed.

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Section: 234mentioning

confidence: 99%

Equation of state and phonon frequency calculations of diamond at high pressures

2003

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“…This shift does not significantly change with deposition temperature and indicates a residual compressive stress in the diamond phase. Sharma et al 25 reported a pressure coefficient for diamond of 2.37 cm' GPa -' and Tardieu et al 26 obtained a pressure coefficient of 2.64 cm-GPa'. Therefore, using an average z cd Z 1000 1200 1400 1600 Raman shift (cm -' ) pressure coefficient of 2.5 cm -' GPa ', it is possible to estimate a 2 GPa residual compressive stress in the deposited diamond originating from the different thermal expansion coefficients of diamond and cemented tungsten carbide.…”

Section: Resultsmentioning

confidence: 99%

A Raman Study of Diamond Film Growth on Co‐Cemented Tungsten Carbide

Polini

Traversa

Marucci

et al. 1997

J. Electrochem. Soc.

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Phase purity and crystallinity of diamond films grown by hot filament chemical vapor deposition on ISO-grade K10 cemented carbide [94.2 weight percent (w/o) WC-5.8 w/o Co] were studied by Raman spectroscopy as a function of substrate temperature, gas phase composition, and substrate pretreatments. High-quality diamond films were grown using 0.5% CH4/H2 in a rather narrow range of substrate temperatures (750 to 760°C). In all the deposited coatings, the firstorder Raman band of diamond is detected at 1337 cm . This fact indicates that a 2 GPa residual compressive stress is present in the diamond phase. The linewidth of the diamond Raman peak increases with deposition temperature. This effect has been ascribed to a higher density of defects in diamond crystallites. It has been observed that Co removal from the substrate surface by wet chemical etching before deposition is less effective than a careful selection of deposition parameters to reduce the codeposition of nondiamond carbon phases. This finding has been attributed to the fast diffusion of the binder from the bulk to the substrate surface, even for the etched substrates. IntroductionThe chemical vapor deposition (CVD) of diamond films on cemented carbides allows the development of cutting tools with improved cutting performance and durability.'7

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“…All samples exhibited similar spectra with an intense diamond peak at 1337 cm À 1 and very weak sp 2 -carbon bands in the 1450- 1600 cm À 1 range. This occurrence indicated that (i) all samples exhibited a large phase purity, independently of the binder nature, and (ii) the residual compressive stress of diamond was around 1.8 GPa [36].…”

Section: Diamond Film Deposition and Adhesionmentioning

confidence: 99%