Pressure contact IGBT, the ideal switch for high power applications

Wakeman, F.; Lockwood, G. W.; Davies, Martin; Billett, K.

doi:10.1109/ias.1999.800026

Cited by 12 publications

(4 citation statements)

References 11 publications

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“…Circular multi-chip press-packs (CMC-PP) for die sized semiconductors, exist since the 90's [13], [14] with products available up to 6.5 kV and approximately 2 kA [15]. These do not have the weakness of bond wires, contributing to R2-4 .…”

Section: High-power Semiconductor Devicesmentioning

confidence: 99%

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

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Recent advancements in silicon carbide (SiC) power semiconductor technology enable developments in the high-power sector, e.g., high-voltage direct current (HVdc) converters for transmission, where today silicon (Si) devices are state-of-theart. New submodule (SM) topologies for modular multilevel converters (MMCs) offer benefits in combination with these new SiC semiconductors. This paper reviews developments in both fields, SiC power semiconductor devices and SM topologies, and evaluates their combined performance in relation to core requirements for HVdc converters: grid code compliance, reliability, and cost.A detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given. Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors (IGBTs) are proposed, and several promising design approaches are discussed. Most advantages can be gained from three technology features. Firstly, SM bipolar capability enables dc fault handling and reduced energy storage requirements. Secondly, SM topologies with parallel conduction paths in combination with SiC metal-oxide-semiconductor field effect transistors (MOSFETs) offer reduced losses. Thirdly, a higher SM voltage enabled by higher blocking voltage of SiC devices results in reduced converter complexity. For the latter, ultra-high-voltage (UHV) bipolar devices, such as SiC IGBTs and SiC gate turn-off thyristors (GTOs), are envisioned. Index Terms-HVdc transmission, modular multilevel converter, power semiconductor devices, silicon carbide, submodules. I. INTRODUCTIONH VDC transmission technology requires integration into the existing alternating current (ac) grid. The conversion is performed via high-power converters. The modular multilevel converter (MMC) is a versatile and flexible topology with several options for optimization. MMCs have been intensively investigated since the early 2000's. It was identified, that modularity, scalability, built-in redundancy, and harmonic performance are advantageous for meeting widely varying requirements in grid applications. Compared to previous voltage source converters (VSC), the need for bulky harmonic filters is Keijo Jacobs

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Section: High-power Semiconductor Devicesmentioning

confidence: 99%

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

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“…The models of 9, 16 and 25 IGBT chips in parallel are respectively established, and the sub-modules are arranged in a square manner, so as to ensure the structural symmetry. In the model, the heat sinks are installed on both sides of the emitter and collector of the device [14][15][16] in order to be consistent with practical applications.…”

Section: Simulation Conditionsmentioning

confidence: 99%

Study of pressure balance for Press-Pack IGBTs and its influence on temperature distribution

Zhao

Liang

Han

2018

Chin. J. Electr. Eng.

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Pressure balance is a key technology for Press-Pack IGBT packaging, and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on. By establishing the physical model of the Press-Pack IGBT device in the finite element simulation software, the influence of the internal flatness condition on the pressure balance is analyzed, and the variation of the average pressure difference with the flatness in different parallel scale of the chips is obtained. The thermal contact resistance and the electrical contact resistance parameters, which are dependent on the pressure, are then imported to perform the multi-field coupling, further investigating the effect of different pressure distributions on temperature distribution. The junction-case thermal resistance of the device with different flatness is compared experimentally. The results have demonstrated the influence of the flatness on the thermal resistance of the Press-Pack IGBT device.

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“…A more recent packaging option for high-powered IGBTs, the press pack, is similar to that used for thyristors. Press packs have upper and lower copper pole pieces that connect (with a dry contact) directly to the IGBT collector and emitter [17]- [19]. Often a molybdenum or tungsten spacer is inserted between the upper pole piece and IGBT for a better match of the materials with respect to the coefficient of thermal expansion (CTE).…”

Section: Packagingmentioning

confidence: 99%

Power semiconductor devices

1981

1981 IEEE Power Electronics Specialists Conference

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Pressure contact IGBT, the ideal switch for high power applications

Cited by 12 publications

References 11 publications

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Study of pressure balance for Press-Pack IGBTs and its influence on temperature distribution

Power semiconductor devices

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