Pressure dependence electrical resistivity in DVT grown molybdenum dichalcogenides

Chaki, Sunil H.; Solanki, G. K.; Patel, Amitkumar J.; Patel, Shivam

doi:10.1080/08957950802298770

Cited by 8 publications

(5 citation statements)

References 12 publications

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“…In this work, we have used grown single crystal of 2H‐MX 2 namely MoS 2 , MoSe 2 , WS 2 and WSe 2 by vapor transport technique. The sample crystallinity as well as composition was verified through energy dispersive analysis of X‐ray and powder X‐ray diffraction pattern, respectively . Unpolarized Raman spectra measurements at high pressure were carried out using a Merrill‐Bassett type diamond anvil cell having 400‐µm diameter culet and hardened steel gasket.…”

Section: Methodsmentioning

confidence: 99%

“…β and γ are the force constants of chalcogen–chalcogen bond along the c‐direction and metal–chalcogen bond, respectively. Using the data for the wavenumber shift due to pressure for

E_{2 normalg}^{1}

and A 1g modes and reported values of cell parameter ‘a’ and ‘c’ at ambient pressure from the references, we estimated the optimum magnitudes of the force constants from Eqns and for high pressure.…”

Section: Effect Of Pressure On Raman Spectramentioning

confidence: 99%

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Raman spectroscopic investigations on transition‐metal dichalcogenides MX₂ (M = Mo, W; X = S, Se) at high pressures and low temperature

Bhatt

Deshpande

Sathe

et al. 2014

J Raman Spectroscopy

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Transition-metal dichalcogenides have been investigated using Raman spectroscopy both being off-resonance and in resonance. The first-order Raman spectra of MoS 2 , MoSe 2 , WS 2 and WSe 2 single crystal synthesized by vapor transport technique have been studied as a function of hydrostatic pressure (0-20 GPa) and temperature (80-300 K). Isobaric and isothermal mode-Grüneisen parameters have been determined from the temperature and pressure-dependent Raman spectra. The pressure dependence of the chalcogen-chalcogen and metal-chalcogen force constant has been obtained using a central force model. Separation of the temperature dependence of Raman mode wavenumbers into quasi-harmonic and purely anharmonic contributions using measured high-pressure Raman data allows us to extract the changes in the phonon wavenumbers arising exclusively due to anharmonic interactions.

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Section: Methodsmentioning

confidence: 99%

“…β and γ are the force constants of chalcogen–chalcogen bond along the c‐direction and metal–chalcogen bond, respectively. Using the data for the wavenumber shift due to pressure for

E_{2 normalg}^{1}

Section: Effect Of Pressure On Raman Spectramentioning

confidence: 99%

Raman spectroscopic investigations on transition‐metal dichalcogenides MX₂ (M = Mo, W; X = S, Se) at high pressures and low temperature

Bhatt

Deshpande

Sathe

et al. 2014

J Raman Spectroscopy

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“…Additionally, ZrS 2 has been extensively studied for batteries [8], supercapacitors [9], and optoelectronics [10], owing to its layered structure, weak van der Waal bonding, unique opto-electrical properties, and quasi-2D characteristic [11]. Similarly, MoS 2 , a member of the same layered material family, is employed in various optoelectronic applications, functioning as efficient p-type semiconductor with a tuneable bandgap range and high absorption coefficient [12]. The selection of MoS 2 as the absorber material is driven by its intriguing properties, including high carrier mobility, coverage of the visible range in the bandgap, cost-effectiveness, and non-toxicity.…”

Section: Introductionmentioning

confidence: 99%

SCAPS 1D based study of hole and electron transfer layers to improve MoS₂–ZrS₂ solar cell efficiency

Shah,

Tailor,

Chaki

et al. 2024

Modelling Simul. Mater. Sci. Eng.

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In the realm of photovoltaic applications, scientists and technocrats are striving to maximize the solar cell input photon energy conversion to electricity. However, achieving optimal cell efficiency requires significant time and energy investment for each variation and optimization. To overcome this issue authors simulated and studied the fabricated cell for optimizing conditions, which can save time and efforts for the relatively better outcomes. The family of transition metal chalcogenides holds promise as a material that yield improved outcomes in optoelectronic applications, particularly in photovoltaics. These materials are employed in experimental investigations aimed at enhancing solar cell parameters, resulting in the development of the FTO/ZnO/ZrS2/MoS2/CuO/Au composite cell. Numerical simulations utilizing SCAPS-1D software is conducted, focusing on the significance of CuO as a hole transport layer (HTL), and ZnO as an electron transport layer (ETL). The investigation examines into the impact of various factors, including thickness, bandgap, and carrier densities for both HTL and ETL, on fundamental solar cell parameters. The study indicates that device parameters are influenced by factors such as recombination rate, photogenerated current, charge carrier length, and built-in-voltage. Optimized parameters for HTL, including thickness, bandgap, and carrier concentration, are determined to be 0⋅35 μm, 1⋅2 eV, and 1⋅0 × 1020 cm–3, respectively. For ETL, the optimized parameters are found to be 0⋅05 μm, 3⋅1 eV, and 1⋅0 × 1018 cm–3, respectively. With these optimized parameters, the efficiency of the solar cell reached 20⋅64%, accompanied by open circuit voltage, short circuit current density, and fill factor values of 0.836 V, 36.021 mA⋅cm–2, and 68⋅54%, respectively. The simulated results indicate that addition of two extra layers and the use of efficient binary materials in heterojunction formation can effectively enhance device parameters, offering advantages such as low-cost and large-scale fabrication.

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“…The transition metal dichalcogenides in short expressed as TMDCs are compound semiconductors with advanced properties, and have thus found to surmount the erstwhile silicon technology. [ 1–5 ] The TMDCs possess lamellar layered structure with each layer formed of a combination of transition metals and chalcogens with formula MX 2 (M: transition metals; X: chalcogens) arranged to form a thin layer. The layers get stacked one on another to form the bulk.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterizations of Rhenium Disulfide (ReS₂) Single Crystals

Ghetiya

Chaki

Khimani

et al. 2021

Physica Status Solidi (a)

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Rhenium disulfide (ReS2) single crystals are grown by chemical vapor transport technique. Powder X‐ray diffraction analysis of the single crystals shows them to possess ReS2 phase with triclinic unit cell structure. Energy dispersive analysis of X‐rays shows the crystals to be slightly rich in sulfur and deficient in rhenium. The optical bandgap obtained of the as‐grown single crystals is 1.35 eV. The surface morphology study done by scanning electron microscopy shows that the crystal surface to be flat with layer edges, such observation states that the growth mechanism of crystal have happened by mechanism of sheet spreading. The transmission and diffraction mode electron microscopy shows the single crystals to be layered and crystalline, respectively. The Raman peaks are well assigned to the ReS2. Thermogravimetric and differential thermogravimetric analysis shows the single crystals to disintegrate by two steps. The differential thermal analysis shows that the ReS2 possesses initial endothermic followed by exothermic nature for fast heating rates. In case of a slow heating rate of 10 K min−1, other than endothermic followed by exothermic, the end temperature range shows endothermic nature. The kinetic parameters determined by Kissinger relation shows the single‐crystal samples to disintegrate at a higher temperature range.

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Pressure dependence electrical resistivity in DVT grown molybdenum dichalcogenides

Cited by 8 publications

References 12 publications

Raman spectroscopic investigations on transition‐metal dichalcogenides MX₂ (M = Mo, W; X = S, Se) at high pressures and low temperature

Raman spectroscopic investigations on transition‐metal dichalcogenides MX₂ (M = Mo, W; X = S, Se) at high pressures and low temperature

SCAPS 1D based study of hole and electron transfer layers to improve MoS₂–ZrS₂ solar cell efficiency

Growth and Characterizations of Rhenium Disulfide (ReS₂) Single Crystals

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Pressure dependence electrical resistivity in DVT grown molybdenum dichalcogenides

Cited by 8 publications

References 12 publications

Raman spectroscopic investigations on transition‐metal dichalcogenides MX2 (M = Mo, W; X = S, Se) at high pressures and low temperature

Raman spectroscopic investigations on transition‐metal dichalcogenides MX2 (M = Mo, W; X = S, Se) at high pressures and low temperature

SCAPS 1D based study of hole and electron transfer layers to improve MoS2–ZrS2 solar cell efficiency

Growth and Characterizations of Rhenium Disulfide (ReS2) Single Crystals

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Product

Resources

About

Raman spectroscopic investigations on transition‐metal dichalcogenides MX₂ (M = Mo, W; X = S, Se) at high pressures and low temperature

Raman spectroscopic investigations on transition‐metal dichalcogenides MX₂ (M = Mo, W; X = S, Se) at high pressures and low temperature

SCAPS 1D based study of hole and electron transfer layers to improve MoS₂–ZrS₂ solar cell efficiency

Growth and Characterizations of Rhenium Disulfide (ReS₂) Single Crystals