Pressure Dependence of Infrared Eigenfrequencies of KCl and KBr

Postmus, C.; Ferraro, John R.; Mitra, S. S.

doi:10.1103/physrev.174.983

Cited by 161 publications

(75 citation statements)

References 20 publications

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“…Temperature-dependent-shift in phonon energy is related to anharmonic terms in the lattice potential energy. This shift in one-phonon modes depends on anharmonic coupling of the phonons and the thermal expansion of the crystal41. In addition, in the case of TaSe 2 , energy of the A 1g and the E 2g modes is also related to electronic susceptibility.…”

Section: Resultsmentioning

confidence: 99%

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Hajiyev

Cong

Qiu

et al. 2013

Sci Rep

133

126

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In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically thin layers of 2H-TaSe2 are characterized by micro-Raman spectroscopy. Room temperature Raman measurements demonstrate MoS2-like spectral features, which are reliable for thickness determination. E1g mode, usually forbidden in backscattering Raman configuration is observed in the supported TaSe2 layers while disappears in the suspended layers, suggesting that this mode may be enabled because of the symmetry breaking induced by the interaction with the substrate. A systematic in-situ low temperature Raman study, for the first time, reveals the existence of incommensurate charge density wave phase transition in single and double-layered 2H-TaSe2 as reflected by a sudden softening of the second-order broad Raman mode resulted from the strong electron-phonon coupling (Kohn anomaly).

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Section: Resultsmentioning

confidence: 99%

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Hajiyev

Cong

Qiu

et al. 2013

Sci Rep

133

126

View full text Add to dashboard Cite

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“…29 This linear behavior of Raman peak frequencies with temperature is seen in many materials within a certain temperature range. 22,23,29 In Table 1 (Table 1 and Supporting Information) and found no significant difference in the first-order temperature coefficients for either mode. The small difference between χ T coefficients for the E 2g 1 mode in suspended versus sapphire-supported likely results from varied in-plane strain applied by the substrate since E 2g 1 mode is prone to strain in MoS 2 while A 1g is not.…”

Section: Resultsmentioning

confidence: 99%

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

et al. 2014

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Atomically thin molybdenum disulfide (MoS2) offers potential for advanced devices and an alternative to graphene due to its unique electronic and optical properties. The temperature-dependent Raman spectra of exfoliated, monolayer MoS2 in the range of 100–320 K are reported and analyzed. The linear temperature coefficients of the in-plane E 2g 1 and the out-of-plane A 1g modes for both suspended and substrate-supported monolayer MoS2 are measured. These data, when combined with the first-order coefficients from laser power-dependent studies, enable the thermal conductivity to be extracted. The resulting thermal conductivity κ = (34.5 ± 4) W/mK at room temperature agrees well with the first-principles lattice dynamics simulations. However, this value is significantly lower than that of graphene. The results from this work provide important input for the design of MoS2-based devices where thermal management is critical.

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“…Both values are higher than that for HOPG, and are expected to approach the HOPG value for thicker graphene films. The temperature coefficient v m depends on the anharmonic potential constants, the phonon occupation number and the thermal expansion of the graphene two-dimensional lattice [84]. The contribution of anharmonic terms is most Fig.…”

Section: Substrate-induced Strain On Graphenementioning

confidence: 99%

Probing mechanical properties of graphene with Raman spectroscopy

2010

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The use of Raman scattering techniques to study the mechanical properties of graphene films is reviewed here. The determination of Grüneisen parameters of suspended graphene sheets under uni-and bi-axial strain is discussed, and the values are compared to theoretical predictions. The effects of the graphene-substrate interaction on strain and to the temperature evolution of the graphene Raman spectra are discussed. Finally, the relation between mechanical and thermal properties is presented along with the characterization of thermal properties of graphene with Raman spectroscopy.

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Pressure Dependence of Infrared Eigenfrequencies of KCl and KBr

Cited by 161 publications

References 20 publications

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

Probing mechanical properties of graphene with Raman spectroscopy

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