Pressure Dependence of the Dielectric Constant of Strontium Titanate

Samara, G. A.; Giardini, A. A.

doi:10.1103/physrev.140.a954

Cited by 54 publications

(24 citation statements)

References 15 publications

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“…DV corrects for the finite size of the cell and was obtained using a method based on the work of Kumagai and Oba with a relative permittivity of 300. 39,[45][46][47] The Fermi level E f was taken relative to the valence band maximum (VBM) and was used as a free parameter when plotting the formation energies. Results of the defect simulations were imported into a point defects database where post-processing was performed to extract defect properties (e.g., thermodynamic transition levels, optical signatures, etc.…”

Section: à3mentioning

confidence: 99%

Defect mechanisms of coloration in Fe-doped SrTiO3 from first principles

Baker

Bowes

Long

et al. 2017

Applied Physics Letters

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To understand the underlying defect mechanisms governing the coloration of Fe-doped SrTiO3 (Fe:STO), density functional theory calculations were used to determine defect formation energies and to interpret optical absorption spectra. A grand canonical defect equilibrium model was developed using the calculated formation energies, which enabled connection to annealing experiments. It was found that FeTi0 is stable in oxidizing conditions and leads to the optical absorption signatures in oxidized Fe:STO, consistent with experiment. Fe:STO was found to transition from brown to transparent as PO2 was reduced during annealing. The defect equilibrium model reproduces a consistent PO2 of this coloration transition. Most critical to reproducing the PO2 of the coloration transition was inclusion of a FeTi-VO first nearest neighbor complex, which was found to be strongly interacting. The coloration transition PO2 was found to be insensitive to the presence of minority background impurities, slightly sensitive to Fe content, and more sensitive to annealing temperature.

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Section: à3mentioning

confidence: 99%

Defect mechanisms of coloration in Fe-doped SrTiO3 from first principles

Baker

Bowes

Long

et al. 2017

Applied Physics Letters

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“…The lattice is easily be distorted by impurities (such as Ca or Ba on the Sr-site), leading to local polar clusters or ferroelectric states. In addition, the dielectric constant is strongly pressure-sensitive [10][11][12], and a transition to a ferroelectric state at low temperature can be induced by uniaxial stress [13,14].…”

mentioning

confidence: 99%

Ferroelectric and antiferroelectric coupling in superlattices of paraelectric perovskites at room temperature

et al. 2003

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Results from dielectric and structural measurements on epitaxial SrTiO 3 /BaZrO 3 superlattices reveal properties that cannot be explained simply in terms of those measured on single films of the constituent materials. The periodic stacking of epitaxial perovskite films, and thus the formation of artificial superlattice structures, allows us to intimately couple dissimilar materials and to observe emerging physical properties that are not necessarily a simple combination of those found in the constituent materials. Motivated both by the technological interest in ferroelectrics for device applications and the quite good understanding of these materials' intriguing properties, structures consisting of paraelectric and ferroelectric layers have received considerable attention. Here we report on the observation of ferroelectric and antiferroelectric properties in structures consisting entirely of paraelectric constituents, and show that the data are compatible with an interpretation of strain-induced ferroelectricity at room temperature and spacing-dependent coupling between such layer.

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“…It is known, that strain is one of the important factors affecting the ferroelectric properties since it is directly related to the ionic polarization in ferroelectrics [8][9][10][11]. It has been demonstrated, that strain modifies the ferroelectric phase transition, the permittivity, and the dielectric tuning [4,[12][13][14][15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 98%

Improved ferroelectricity of strained SrTiO3 thin films on sapphire

et al. 2008

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Magnetron sputtered and laser deposited SrTiO 3 thin films are deposited on CeO 2 buffered sapphire substrates. Their structural properties are investigated and correlated to the dielectric properties of the SrTiO 3 films. It is shown, that the biaxial compressive strain imposed by the substrate on the ferroelectric films leads to a considerable increase of the permittivity and tunability of SrTiO 3 thin films in technically relevant temperature regimes. Generally, the permittivity and tunability decreases with increasing strain. However, the ferroelectric phase transition of the SrTiO 3 films is shifted to higher temperatures compared to that of single crystalline SrTiO 3 . As a consequence, the permittivity of the films is larger than that of undistorted SrTiO 3 single crystals for small strain (Δa/a<0.005) and temperatures above the Curie temperature. Furthermore, a linear dependence of the loss tangent and the tunability on the permittivity is observed, which indicates, that all three properties are affected by the same mechanism that itself is affected by the lattice strain.

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Pressure Dependence of the Dielectric Constant of Strontium Titanate

Cited by 54 publications

References 15 publications

Defect mechanisms of coloration in Fe-doped SrTiO3 from first principles

Defect mechanisms of coloration in Fe-doped SrTiO3 from first principles

Ferroelectric and antiferroelectric coupling in superlattices of paraelectric perovskites at room temperature

Improved ferroelectricity of strained SrTiO3 thin films on sapphire

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