2006
DOI: 10.1016/j.jpcs.2006.06.017
|View full text |Cite
|
Sign up to set email alerts
|

Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
6
0

Year Published

2007
2007
2023
2023

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 14 publications
(6 citation statements)
references
References 21 publications
0
6
0
Order By: Relevance
“…From the fitting results, figure 5 plots the peak energy of the FX corresponding to the different positions along the bent nanowire. In contrast to the normal pressure-induced blue-shift [28][29][30], an obvious redshift can be observed for the near-band-edge FX emission. In this case, we proposed that a uniaxial tensile strain can be dominant when a bending deformation is applied on the ZnO nanowire, which is in good agreement with our Raman measurement and theoretical predictions from [7].…”
Section: Resultsmentioning
confidence: 84%
“…From the fitting results, figure 5 plots the peak energy of the FX corresponding to the different positions along the bent nanowire. In contrast to the normal pressure-induced blue-shift [28][29][30], an obvious redshift can be observed for the near-band-edge FX emission. In this case, we proposed that a uniaxial tensile strain can be dominant when a bending deformation is applied on the ZnO nanowire, which is in good agreement with our Raman measurement and theoretical predictions from [7].…”
Section: Resultsmentioning
confidence: 84%
“…Furthermore, it also implies that the multifield-coupling effect indeed occurs only in the surface skin, but this effect can be omitted for larger particle sizes. The relationship between E G and the energy of the free exciton ( E FX ) and its n th longitudinal optic (LO) phonon replicas can be expressed as E FX- n LO = E G + 3 / 2 k B T − n ℏω LO , where k B is the Boltzmann constant, ℏω LO represents the LO phonon energy, and ℏω LO = 72 meV . The application of pressure increases the binding energy of a shallow exciton arising from an increase of electron effective mass and a decrease in dielectric constant as the E G increases.…”
Section: Resultsmentioning
confidence: 99%
“…(a) Theoretical (solid) reproduction of the measured pressure dependence of E G for ZnO at a variety of sizes and temperatures. The experimental data are sourced from refs ; and (b) the measured pressure dependence of E FX- n LO at 70 K. The experimental data are sourced from the ref .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The 0D ZnO materials include quantum dots (QDs), nanoparticles, , nanoballs, , etc. The 0D ZnO nanostructure is a kind of new high functional fine inorganic material oriented toward the 21st century which shows a lot of special properties, such as migration, fluorescent, piezoelectric, absorption and scattering capacities in the UV range, etc., in the light, electricity, magnetic, and sensitive aspects of application, such as manufacturing gas and biological sensors, spintronics, phosphors, rheostats, UV shielding materials, image recording materials, piezoelectric materials, varistors, efficient catalysts, magnetic materials, and laser protection materials. , The 1D ZnO nanostructure materials include nanorods, nanotubes, nanowires (NWs), nanobelts,…”
Section: Introductionmentioning
confidence: 99%