Pressure dependence of the refractive index in InSe

Manjón, F. J.; Vijver, Y van der; Segura, A.; Muñoz, V.

doi:10.1088/0268-1242/15/8/304

Cited by 13 publications

(11 citation statements)

References 49 publications

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“…By comparing the photocurrent signals in areas with and without the hBN layer, we find that the encapsulation of InSe by hBN induces a systematic increase of the signal (approximately by a factor of 3). We attribute this behavior, which is not observed when the hBN layer lies below the InSe layer, to an increased absorption of light by the InSe layer due to the reduced reflection of the laser light at the interface between air and hBN (refractive index n hBN = 1.8), compared to air ( n air = 1) and InSe ( n InSe = 2.7) . The encapsulation of InSe by hBN also leads to an increased photoluminescence and Raman signals of InSe.…”

Section: Resultsmentioning

confidence: 88%

Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

Bhuiyan

Kudrynskyi

Mazumder

et al. 2018

Adv Funct Materials

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The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the "post-transition" metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n-type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light-induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate-controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light-induced charge transfer in gate-tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.

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Section: Resultsmentioning

confidence: 88%

Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

Bhuiyan

Kudrynskyi

Mazumder

et al. 2018

Adv Funct Materials

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“…However, it induces a significant increase of both Raman and PL signals. This behavior, which is not observed when the hBN layer lies below the InSe layer, is indicative of an increased absorption of light by the InSe layer due a smaller reflection of the laser light at the interface between air and hBN (refractive index n hBN = 1.8 [65]), compared to air (n air = 1) and InSe (n InSe = 2.7 [66]).…”

Section: A Vdw Inse Nanolayers and Heterostructuresmentioning

confidence: 99%

Coherent acoustic phonons in van der Waals nanolayers and heterostructures

et al. 2018

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Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution and enable control of electrical and optical properties on a picosecond time scale. However, coherent acoustic phonons have not yet been widely used to study van der Waals (vdW) two-dimensional (2D) materials and heterostructures. This class of 2D systems features strong covalent bonding of atoms in the layer planes and weak van der Waals attraction between the layers. The dynamical properties of the interface between the layers or between a layer and its supporting substrate are often omitted as they are difficult to probe. On the other hand, these play a crucial role in interpreting experiments and/or designing new device structures. Here, we use picosecond ultrasonic techniques to investigate phonon transport in vdW InSe nanolayers and InSe/hBN heterostructures. Coherent acoustic phonons are generated and detected in these 2D systems and allow us to probe elastic parameters of different layers and their interfaces. In particular, our study of the elastic properties of the interface between vdW layers reveals a strong coupling over a wide range of frequencies up to 0.1 THz, offering prospects for high-frequency electronics and technologies that require control over the charge and phonon transport across an interface. In contrast, we reveal a weak coupling between the InSe nanolayers and sapphire substrates, relevant in thermoelectrics and sensing applications, which can require quasi-suspended layers.

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“…The pressure increase was shown to be much larger for ∥ and, as a result, at 15 GPa the difference − ∥ vanishes, as shown in Figure 18a. For ε-GaSe [57,72] and γ-InSe [80,81], the interference fringe pattern of the transmitted light was used to determine the pressure dependence of the refractive index for polarization perpendicular to the c-axis ( ). A large increase of was found for both materials.…”

Section: Dielectric Properties Under High Pressurementioning

confidence: 99%

Layered Indium Selenide under High Pressure: A Review

Segura

2018

Crystals

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This paper intends a short review of the research work done on the structural and electronic properties of layered Indium Selenide (InSe) and related III-VI semiconductors under high pressure conditions. The paper will mainly focus on the crucial role played by high pressure experimental and theoretical tools to investigate the electronic structure of InSe. This objective involves a previous revision of results on the pressure dependence of the InSe crystal structure and related topics such as the equation of state and the pressure-temperature crystal phase diagram. The main part of the paper will be devoted to reviewing the literature on the optical properties of InSe under high pressure, especially the absorption experiments that led to the identification of the main optical transitions, and their assignment to specific features of the electronic structure, with the help of modern first-principles band structure calculations. In connection with these achievements we will also review relevant results on the lattice dynamical, dielectric, and transport properties of InSe, as they provided very useful supplementary information on the electronic structure of the material.

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Pressure dependence of the refractive index in InSe

Cited by 13 publications

References 49 publications

Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures

Coherent acoustic phonons in van der Waals nanolayers and heterostructures

Layered Indium Selenide under High Pressure: A Review

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