Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases

Tehrani, Fatemeh Shariatmadar; Goh, Boon Tong; Muhamad, Muhamad Rasat; Rahman, Saadah Abdul

doi:10.1007/s10854-012-0934-z

Cited by 38 publications

(7 citation statements)

References 27 publications

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“…Traditionally, hollow spherical SiC particles have been synthesized by gas phase reactions and solid‐vapor or solid‐state synthesis. The gas phase reaction usually employs the decomposition of silane/methane precursors using high‐temperature furnace tubes, gas evaporation processes, plasma reactors, and chemical vapor deposition processes 20–22 . Unfortunately, these techniques have disadvantages, such as the use of expensive raw materials, the toxicity of the precursors, and the need for special equipment.…”

Section: Introductionmentioning

confidence: 99%

“…The gas phase reaction usually employs the decomposition of silane/methane precursors using high-temperature furnace tubes, gas evaporation processes, plasma reactors, and chemical vapor deposition processes. [20][21][22] Unfortunately, these techniques have disadvantages, such as the use of expensive raw materials, the toxicity of the precursors, and the need for special equipment. Difficulty in controlling particle shape and shell thickness, along with heavy agglomeration of the final product, are other problems that cannot be readily avoided.…”

Section: Introductionmentioning

confidence: 99%

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Self‐templated magnesiothermic reduction of ORMOSIL particles to monodisperse hollow spherical SiC composite particles

Jung,

Lim,

Lee

et al. 2024

J Am Ceram Soc.

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Hollow silicon carbide (SiC) particles have attracted attention due to their well‐defined morphology, low density, and large surface area that can be leveraged for a wide variety of applications. Here, we report the self‐templated synthesis of monodisperse hollow spherical SiC composite particles with controllable shell thicknesses using magnesiothermic reduction of organically modified silica (ORMOSIL) particles. Monodisperse ORMOSIL particles containing three organic groups of methyl, vinyl, and mercaptopropyl were produced by a simple one‐pot sol–gel process and then converted to hollow spherical SiC composite particles via a magnesiothermic reduction at 700°C under an inert atmosphere. The spherical morphologies of the original ORMOSIL particles were well maintained through this self‐templated conversion process, but the sizes of the hollow SiC particles were slightly reduced by the thermal treatment. Field emission transmission electron microscopy studies revealed that the shell of hollow particles mainly consists of primary β‐SiC particles with nanometer‐scale sizes. The physical and chemical properties of the hollow SiC composite particles were investigated by scanning electron microscopy, transmission electron microscopy, X‐ray photoelectron spectroscopy, Brunauer–Emmett–Teller, X‐ray diffraction, Fourier transform infrared spectroscopy, Raman, and solid‐state nuclear magnetic resonance analyses. The shell thickness of hollow spherical SiC composite particles can be controlled by simply changing the duration of the thermal conversion process. This study not only provides a simple and easy approach for the preparation of hollow spherical SiC particles but also opens the possibility of large‐scale manufacturing of such particles for commercial applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Self‐templated magnesiothermic reduction of ORMOSIL particles to monodisperse hollow spherical SiC composite particles

Jung,

Lim,

Lee

et al. 2024

J Am Ceram Soc.

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“…The same conclusion was reached by Zhao et al, 12 who showed that the crystallinity of the deposited silicon carbide (SiC) thin films was improved upon the usage of a higher total gas pressure with a mixture composed of SiH 4 , CH 4 , and H 2 . More recently, Tehrani et al 13 studied the effect of pressure on the composition and optical properties of SiC films deposited by HWCVD using a mixture of SiH 4 and CH 4 . They found that low pressures resulted in the deposition of a-SiC:H films, which are silicon rich embedded with silicon nanocrystals.…”

Section: Introductionmentioning

confidence: 99%

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

ToukabriRim

ShiYujun

2015

Can. J. Chem.

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The effect of source gas pressure on the gas-phase reaction chemistry of dimethylsilane (DMS) and monomethylsilane (MMS) in the hot-wire chemical vapor deposition process has been studied by examining the secondary gas-phase reaction products in a reactor using a soft laser ionization source coupled with mass spectrometry. For DMS, the increase in sample pressure has resulted in the formation of small hydrocarbons, including ethene, acetylene, propene, and propyne. This leads to a switch from silylene dominant chemistry to a free radical dominant one with the pressure increase at low filament temperatures of 1200 and 1300°C. At the lower pressure of 0.12 Torr, the formation of 1,1,2,2-tetramethyldisilane by dimethylsilylene insertion reaction into the Si-H bond in DMS is favored over trimethylsilane produced from a free radical recombination reaction for a short reaction time. However, when the pressure is increased by 10 times, the gas-phase chemistry becomes dominated by the formation of trimethylsilane. We have demonstrated that trapping of the corresponding active intermediates by the small hydrocarbons produced in situ is responsible for the observed switch. In the study with MMS, the gas-phase chemistry is dominated by the formation of 1,2-dimethyldisilane and 1,3-disilacyclobutane at both pressures of 0.48 and 1.2 Torr. Unlike DMS, the gas-phase reaction chemistry with MMS does not involve free radicals, which are the precursors to produce small hydrocarbons. The absence of small hydrocarbons formed in situ with MMS explains the preservation in chemistry upon the increase in pressure when MMS is used as a source gas.Résumé : On a étudié dans un réacteur l'effet de la pression du gaz source sur la réaction en phase gazeuse du diméthylsilane (DMS) et du monométhylsilane (MMS) par un procédé de dépôt chimique en phase vapeur à fil chaud, en étudiant les produits secondaires dans la phase gazeuse au moyen d'un laser de faible puissance utilisé comme source d'ionisation et couplé avec un spectromètre de masse. Dans le cas du DMS, l'augmentation de la pression de l'échantillon a entraîné la formation d'hydrocarbures légers, notamment l'éthène, l'acétylène, le propène et le propyne. On en déduit que l'environnement chimique où la formation du silylène prédomine passe à un environnement chimique où la formation de radicaux libres prédomine dans lequel une augmentation de la pression s'est produite à de basses températures du filament (1200 et 1300°C). À la pression la plus faible (0,12 Torr), pendant un temps de réaction court, la formation du 1,1,2,2-tétraméthyldisilane par réaction d'insertion du diméthylsilylène dans le lien Si−H du DMS a été favorisée, par rapport à la formation du triméthylsilane issu de la réaction de recombinaison de radicaux libres. Toutefois, lorsque la pression était décuplée, la formation en phase gazeuse du triméthylsi-lane était prédominante. Nous avons démontré que le piégeage des intermédiaires réactifs par les hydrocarbures légers produits in situ est responsable du changement obse...

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“…The dependence on pressure of the thermodynamic properties of thin film is of great interest not only from a fundamental point of view but also for technological applications [3][4][5][6][7][8][9][10]. In general, investigating for dependence on pressure of thin film almost at low-pressure and in deposition process of thin film on substrate [5,7,8]. Most of researches of thin films are mainly experimental work [3][4][5][6][7][8][9][10] but very few studies are theoretical ones.…”

Section: Introductionmentioning

confidence: 99%

“…In general, investigating for dependence on pressure of thin film almost at low-pressure and in deposition process of thin film on substrate [5,7,8]. Most of researches of thin films are mainly experimental work [3][4][5][6][7][8][9][10] but very few studies are theoretical ones. The influence of oxygen pressure on the growth of (Ba 0:02 Sr 0:98 ATiO 3 thin film on MgO substrate by pulsed laser deposition techniques have been investigated in the oxygen pressure range from 40 to 10 3 Pa [7].…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Properties of Free Standing Thin Metal films Investigated Using Statistical Moment Method: Temperature and Pressure Dependence

Hùng¹,

Phuong²,

Hòa³

2014

Comm. in Phys.

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The moment method in statistical dynamics \textit{(SMM)} is used to study thermodynamic properties of free standing thin metal films with face-centered cubic structure (fcc) taking into account the anharmonicity effects of the lattice vibrations and hydrostatic pressures. The explicit expressions of the lattice constant, thermal expansion coefficient, and specific heats at the constant volume and those at the constant pressure, \(C_V\) and \(C_P\) of the metal thin films are derived in closed analytic forms in terms of the power moments of the atomic displacements. The thermodynamic quantities of Au, Ag, Cu and Al metal thin films are calculated as a function of the temperature and pressure, and they are in good agreement with the corresponding results obtained from other theoretical calculations and experimental values. The effective pair potentials work well for the calculations of fcc metal thin films.

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Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases

Cited by 38 publications

References 27 publications

Self‐templated magnesiothermic reduction of ORMOSIL particles to monodisperse hollow spherical SiC composite particles

Self‐templated magnesiothermic reduction of ORMOSIL particles to monodisperse hollow spherical SiC composite particles

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

Thermodynamic Properties of Free Standing Thin Metal films Investigated Using Statistical Moment Method: Temperature and Pressure Dependence

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