Pressure-driven structural and electronic transitions in a quasimolecular layered compound of antimony triiodide

Hong, Meiling; Dai, Lidong; Hu, Haiying; Zhang, Xinyu; Li, Chuang; Feng, Xiaolei; Yu, Shidong; Zhang, Limin; Mi, Zhongying; Aswathappa, Sivakumar

doi:10.1039/d3qi01126g

Inorg. Chem. Front.

2023

DOI: 10.1039/d3qi01126g

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Pressure-driven structural and electronic transitions in a quasimolecular layered compound of antimony triiodide

Meiling Hong,

Lidong Dai,

Haiying Hu

et al.

Abstract: High-pressure structural and electronic transitions of SbI3 under different hydrostatic environments were investigated using synchrotron X-ray diffraction, Raman spectroscopy, electrical conductivity and first-principles theoretical calculations.

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2024

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Cited by 3 publications

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Photoelectric properties surge driven by molecular-ionic crystal transition in layered antimony triiodide under high pressure

Li,

Chen,

Tian

et al. 2024

Acta Materialia

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Photoelectric properties surge driven by molecular-ionic crystal transition in layered antimony triiodide under high pressure

Li,

Chen,

Tian

et al. 2024

Acta Materialia

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Structural and Electronic Phase Transitions in Three Stable Tin–Sulfur Metallic Chalcogenides under High Pressure

Hong,

Dai,

et al. 2024

Inorg. Chem.

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As a representative homologous series, tin-bearing metallic chalcogenides (Sn x S y ) have sparked considerable attention because of their stoichiometric compositions and structural diversities. In this work, three stable compounds, SnS, Sn 2 S 3 , and SnS 2 , were screened from Sn x S y and a comprehensive investigation on their structural and electrical transport properties was performed up to 60.1 GPa using a diamond anvil cell (DAC) under different hydrostatic environments. Upon nonhydrostatic compression, SnS underwent the Pnma-to-Cmcm transition accompanied by metallization at 7.6 GPa, followed by the Cmcm-to-Pm3̅ m transformation at 17.8 GPa. For SnS 2 , the pressure-induced metallization and isostructural phase transition (IPT) occurred successively at 31.2 and 46.6 GPa, respectively. As an intermediate composition, Sn 2 S 3 first experienced an IPT at 10.8 GPa, and then, the Pnma-to-Cmcm transition concomitantly with metallization occurred at 16.9 GPa, analogous to the high-pressure structural transformation routes of SnS and SnS 2 . The 0.6−5.4 GPa pressure hysteresis was detectable for the phase transitions of Sn x S y under quasi-hydrostatic and hydrostatic conditions owing to the influence of deviatoric stress. In comprehensive consideration of our high-pressure Raman scattering and electrical conductivity results, the systematic construction of a pressure-phase state diagram on Sn x S y not only unveils its composition−structure−property relation but also advances the in-depth exploration for other IVA−VIA metallic chalcogenides.

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Pressure-induced ferroelectric and electronic transitions in two-dimensional ferroelectric semiconductor of NbOCl2 up to 41.7 GPa

Hong,

Dai,

et al. 2024

Applied Physics Letters

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NbOCl2, a representative van der Waals ferroelectric (FE) semiconductor, has become the research frontier due to its peculiar appeal in both fundamental research studies and potential applications. In the present work, the high-pressure structural, vibrational, and electrical transport properties of NbOCl2 under different hydrostatic environments were systematically investigated over a wide pressure range of 1.7–41.7 GPa using a diamond anvil cell coupled with in situ Raman spectroscopy, electrical conductivity, and high-resolution transmission electron microscopy (HRTEM) observations. Upon non-hydrostatic compression, NbOCl2 underwent a FE-to-antiferroelectric phase transition at 3.4 GPa, followed by a semiconductor-to-metal transformation at 15.7 GPa. Under hydrostatic compression, the FE transformation and metallization of NbOCl2 were postponed by ∼2.0 and ∼4.0 GPa due to the effect of helium pressure-transmitting medium. Upon decompression, the phase transition was demonstrated to be reversible under different hydrostatic environments, which was well corroborated by HRTEM analyses. In addition, the linear relations between electrical current and sinusoidal voltage with the nonlinearity factors of ∼1.0 reflect the Ohmic response of NbOCl2 before and after the FE transition. Our findings on NbOCl2 provide a guideline for exploring other layered FE materials under high pressure and establishing a design paradigm for new generations of FE-based devices.

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Pressure-driven structural and electronic transitions in a quasimolecular layered compound of antimony triiodide

Abstract: High-pressure structural and electronic transitions of SbI3 under different hydrostatic environments were investigated using synchrotron X-ray diffraction, Raman spectroscopy, electrical conductivity and first-principles theoretical calculations.

Cited by 3 publications

References 46 publications

Photoelectric properties surge driven by molecular-ionic crystal transition in layered antimony triiodide under high pressure

Photoelectric properties surge driven by molecular-ionic crystal transition in layered antimony triiodide under high pressure

Structural and Electronic Phase Transitions in Three Stable Tin–Sulfur Metallic Chalcogenides under High Pressure

Pressure-induced ferroelectric and electronic transitions in two-dimensional ferroelectric semiconductor of NbOCl2 up to 41.7 GPa

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