It is known that substitution of a small fraction of
Ti atoms in
Ti3O5 by aliovalent metal atoms alters its heat-storage
properties, i.e., β → λ phase-transition enthalpy
and temperature, and extends its range of application to, for example,
the capture and utilization of waste heat. Heat-storage properties
vary depending on the substituting element and its concentration.
The exploration of the vast space of possible combinations of these
quantities is challenging due to the small energy differences under
consideration. Thus, computational approaches which reliably predict
heat-storage properties of such defective systems can aid in the screening
of potential material candidates for subsequent synthesis. Substituted
compounds M
x
Ti3–x
O5 with trivalent M = Sc, Al, and Mg have been reported
in the literature. Here we present the first thorough study of the
doping effect on the electronic structure and the heat-storage properties
of Ti3O5 from first principles. Electronic ground
states were calculated for all Ti–M substitution positions
using the M06 hybrid functional. Doping leads to increased metallic
character in both phases, which primarily results from a change in
atomic positions and not from the substituting element itself. We
applied the r2SCAN-D3 method to the study of heat-storage
properties of those materials and found good agreement in phase-transition
enthalpies with experimentally recorded data. Calculated phase-transition
entropies show larger deviations from experiment. The phase-transition
mechanism is studied as a function of the defect concentration by
calculating the minimum-energy path. Doping primarily changes the
relative energy of both phases and leaves the activation barrier virtually
unchanged. Our results suggest that heat-storage systems of this kind
are efficient only for M concentrations below 4 atom %.