PRESSURE EFFECTS IN Ga(As1−<i>x</i>P<i>x</i>) ELECTROLUMINESCENT DIODES

Fulton, T. A.; Fitchen, D. B.; Fenner, G. E.

doi:10.1063/1.1723582

Cited by 26 publications

(2 citation statements)

References 9 publications

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“…that the light-emission process in a direct-gap crystal is much stronger than in an indirect-gap material. For example, when the pressure on (direct-gap) GaAsl-zPz (58) or Inl-zGaxPl-zAsz (59) laser diodes is increased, the X indirect band minima and the r direct minimum (Fig. 1) shift and approach one another; as Er --> Ex, electrons transfer from r to X and laser operation quenches.…”

Section: Laser Diodes--there Is Ample Evidence Showingmentioning

confidence: 99%

Compound Semiconductors

Holonyak

Stillman

Wolfe

1978

J. Electrochem. Soc.

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The invention of the transistor (1, 2) in late 1947 and its later embodiment in junction form (3) marked the beginning of a profound change in electronics. Not only did the receiving tube basically become obsolete, but many new device functions emerged, and ultimately unbelievable size reductions and enormous packing densities resulted. As is well known, it became possible to build an entire functional system in a single conducting block of material. Also, new forms of power devices, based on the transistor effect, became possible.With the invention of the transistor the study of electrical conduction in solids took on new importance, and similarly the growth and study of semiconductor crystals, at first, Ge (4). Since Ge is a much more tractable material than other elemental semiconductors, it was natural that the transistor began with Ge, and that in turn the transistor (and p-n junctions) motivated the growth and study of single crystal Ge of great purity (4, 5). In fact, Ge and its successor Si, because of the transistor, have been purified to such high. levels and have been grown with such perfection that Si now even serves as the standard for determination of Avogadro's number (6).The original transistor pioneers were quite aware that beyond their initial experimental material (Ge), Si offered a large potential (7). The real emergence of Si as a transistor material probably came in late 1954 and early 1955 when, at Bell Laboratories, Sidiffused-impurity devices were first constructed. Based on his considerable understanding of switching devices and the need for low off-stage leakage current, John Moll above all others urged the development of diffused-impurity Si devices; for this purpose, in his own group Au-Sb and A1 metallization of Si were developed (8), as well as certain forms of transistor devices (9). The most important form of diffused-impurity p-n junctions came from Carl Frosch (and L. Derick) (1O), including oxide masking and with it the teaching to leave the oxide on Si for protection of the device (11). These developments were sufficient for Moll and his colleagues to be able to convince Jack Morton (spring of 1955) to switch transistor development from Ge to Si. The rest is history, and now where Si "can do the job," there is little interest on the part of device researchers to attempt to displace it with another material. No other material has been as extensively developed, nor offers a natural oxide affording so many processing and device advantages.As useful as Ge and, more so, Si have proven to be in semiconductor devices, they possess also certain limitations. Their bandgaps are indirect and are fixed 4 487C 488C

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Section: Laser Diodes--there Is Ample Evidence Showingmentioning

confidence: 99%

Compound Semiconductors

Holonyak

Stillman

Wolfe

1978

J. Electrochem. Soc.

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“…A Manganin gauge is used for pressure measurements. The pressure coefficients of the T and X energy gaps of GaAsj.^Pjf are known from previous work 2 ' 18 to be dE T /dp ~10" 5 eV/bar and dE x /dp ~-l(T 6 eV/ bar. The combined pressure variation of the band gaps simulates a composition change of dx/ d£~l.l%/kbar.…”

Section: A^\ C Nt F Ni M _t_]mentioning

confidence: 99%

Direct Study of the Nature of Nitrogen Bound States inGaAs1−xPx:N

et al. 1976

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sumed no changes in the magnitude of the interaction strengths for the surface spins. The surface spin wave obtained in Ref. 7 splits off from the bulk spectrum from below, in contrast to the surface spin wave in the itinerant-electron model, which always lies above the bulk-spin-wave spectrum (even at g" = 0).It is clear that surface spin waves in itinerantelectron ferromagnets generally involve relatively high frequencies. Their study by microwave ferromagnetic resonance techniques would only be possible for small values of the exchange splitting. We have seen that in strong ferromagnets, the long-wave length surface modes are highly localized near the surfaces and thus an ideal probe would be by spin-polarized electron scattering or energy-loss measurements. Indeed, in such experiments, the large energies of longwavelength itinerant surface spin waves will be an advantage in removing energy resolution difficulties. More indirectly, the existence of these modes may show up by their effect on the rate of chemical reactions on ferromagnetic metal sur-Recent experimental studies of nigrogen-doped In^Ga^P * and GaAs^^Px 2 " 4 lead to a new interpretation of the previously observed 5 N-trap luminescence transitions in these materials. The broad luminescence band previously attributed to NN pairs arises from recombination between holes and electrons in single nitrogen bound states (labeled N x ) with a strong phonon sideband. 1 " 3 In addition, the transitions identified in early work as NN 3 pairs (x = 0.37, 0.38) 5fi and the A line (0.40 %x %> 0.53) 5 ' 7 in GaAs^P^N are faces. . 4 G. Gumbs and A. Griffin, to be published. ^We remark that in the complete absence of a finiterange interaction [i.e., I(q) =/ 0 ], one can show (see Ref. 2) that the poles of x+-for a slab are given by the zeros of € M (q\\ t q z ,<^), rather than the zeros of D defined in (9). The only way the boundaries come in in this case is to restrict the values of q z to multiples of TT/L , corresponding to bulk-mode standing waves. 6 S. C. Ying, L. M. Kahn, and M. T. Beal-Monod, Solid State Commun. 18, 359 (1976). 7 R. Fo Wallis, A. A. Maradudin, I. P. Ipatova, and A. A. Klochikhin, Solid State Commun. J5, 89 (1967). 8 See, for example, K. G. Petzinger and D. J. Scalapino, Phys. Rev. B 8, 266 (1973).actually an additional N-trap bound state (N r ) 2g4 with a smaller binding energy than N^. Hydrostatic-pressure experiments, in which the T and X energy gaps change with pressure and allow the continuous study of these states over a simulated composition range, demonstrate that the deep N x state is derived primarily from the X-conductionband minima for x <: 0.42 2 and that the shallow bound state, N r , follows the r minimum for 0.30 %x ^>0.45 and then bends and follows X for 0.45 %x ^0.53. In this latter range, as the present A new theory in which the observed electronic states in N-doped GaAs^P^ derive from the combination of a long-range disorder and strain-induced nitrogen-associated potential and the usual short-range isoelectronic nitrogen po...

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Der Halbleiterlaser

Winstel¹

1969

Laser

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PRESSURE EFFECTS IN Ga(As1−xPx) ELECTROLUMINESCENT DIODES

Cited by 26 publications

References 9 publications

Compound Semiconductors

Compound Semiconductors

Direct Study of the Nature of Nitrogen Bound States inGaAs1−xPx:N

Der Halbleiterlaser

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