2024
DOI: 10.1039/d4tc01532k
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Pressure-enhanced optoelectronic properties in the two-dimensional metal phosphorus trichalcogenide semiconductor SnPSe3

Mengyao Qi,
Meiyan Ye,
Shuailing Ma
et al.

Abstract: Pressure engineering in two-dimensional semiconductor materials metal phosphorus trichalcogenides (MPTs) has successfully induced diverse novel physical phenomena such as spin-crossover, volume collapse, piezochromism, metallization, and superconductivity. Here, we show that...

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