2003
DOI: 10.1103/physrevb.67.172406
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Pressure-induced Fermi-liquid behavior in the Kondo insulatorSmB6:Possible transition through a quantum critical point

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Cited by 63 publications
(69 citation statements)
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“…The fitting errors are 1.9% at 1 bar and 3.7% at 16.5 kbar, which are much smaller than change of 1/T 1 (around 20%) in the temperature range 20-100 K. The value of E g at 1 bar is in good agreement with other NMR experiments [1,10]. However, the decrease of E g with increasing applied pressure is quite large in comparison with other experimental methods [2,9]. One of the possible explanations is that pressure brings about not only the decrease of E g , but also changes in spin correlations.…”
Section: Methodssupporting
confidence: 76%
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“…The fitting errors are 1.9% at 1 bar and 3.7% at 16.5 kbar, which are much smaller than change of 1/T 1 (around 20%) in the temperature range 20-100 K. The value of E g at 1 bar is in good agreement with other NMR experiments [1,10]. However, the decrease of E g with increasing applied pressure is quite large in comparison with other experimental methods [2,9]. One of the possible explanations is that pressure brings about not only the decrease of E g , but also changes in spin correlations.…”
Section: Methodssupporting
confidence: 76%
“…The properties of this system are governed by several energy scales. In temperature range from ≈ 70 K to 15 K the properties are characterized by hybridization gap E g ≈ 10-20 meV [2] and the system is semiconducting. Between 15 K and 5 K an in-gap band with activation energy E d ≈ 3-5 meV (situated below the conduction band) was observed by several experimental measurements [3][4][5].…”
Section: Introductionmentioning
confidence: 99%
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“…However, the gap being caused by hybridization is discussed controversially. For instance, if the hybridization is altered by the application of pressure, a continuous change in the gap is expected (15,16), although other experiments show a discontinuous change (17,18). This is relevant because altered atomic distances at the surface (e.g., by valence changes at the surface) then also may result in a conducting surface layer.…”
mentioning
confidence: 99%
“…CeIrSb [35]). Moreover, assuming that increasing pressure roughly corresponds to reducing the interaction strength, we can qualitatively account for the nonuniversal behavior of the gap as observed in several Kondo semiconductors [33,[36][37][38][39][40].Model and method. Our starting point is the topological Anderson lattice model on a square lattice, H =…”
mentioning
confidence: 99%