Pressure-Induced Mott Transition in an Organic Superconductor with a Finite Doping Level

Ôike, Hiroshi; Miyagawa, Kazuya; Taniguchi, Hiromi; Kanoda, K.

doi:10.1103/physrevlett.114.067002

Cited by 60 publications

(86 citation statements)

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“…Mott insulators are likely to show metallization at high pressure due to competition between Coulomb repulsion and bandwidth. The latter is more susceptible to applied pressure [2], and therefore, experiments in which the bandwidth can be controlled with pressure represent an experimental proof for the existing theories on the behaviour of the strongly correlated electron systems, as reported in MnO [3], BaCoS 2 [4], Ba 2 IrO 4 [5], Ca 2 RuO 4 [6] and in the organic compound bis(ethylenedithio)tetrathiafulvalene [7]. Quite often, pressure-induced MIT is associated with symmetry changes, as for instance in SrTiO 3 [8] or BiNiO 3 [9,10], where the suppression of charge disproportionation involving the Bi 3+ /Bi 5+ ions is reported to bring from a triclinic insulating phase to higher-symmetry metallic phase.…”

Section: Introductionmentioning

confidence: 52%

High Pressure Induced Insulator-to-Semimetal Transition through Intersite Charge Transfer in NaMn7O12

et al. 2018

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Abstract:The pressure-dependent behaviour of NaMn 7 O 12 (up to 40 GPa) is studied and discussed by means of single-crystal X-ray diffraction and resistance measurements carried out on powdered samples. A transition from thermally activated transport mechanism to semimetal takes place above 18 GPa, accompanied by a change in the compressibility of the system. On the other hand, the crystallographic determinations rule out a symmetry change to be at the origin of the transition, despite all the structural parameters pointing to a symmetrizing effect of pressure. Bond valence sum calculations indicate a charge transfer from the octahedrally coordinated manganese ions to the square planar ones, likely favouring the delocalization of the carriers.

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Section: Introductionmentioning

confidence: 52%

High Pressure Induced Insulator-to-Semimetal Transition through Intersite Charge Transfer in NaMn7O12

et al. 2018

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“…For that filling, the signs of t and t do not modify the phase diagram. Layered organic compounds are usually halffilled, but doped compounds 41,42 have been investigated experimentally 43,44 and theoretically.…”

Section: Model and Methodsmentioning

confidence: 99%

Mott transition and magnetism on the anisotropic triangular lattice

et al. 2016

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Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound κ-H3(Cat-EDT-TTF)2. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice with t /t 1.5, where t is the minority hopping. It thus becomes important to extend previous studies, that were performed in the range 0 ≤ t /t ≤ 1.2, to find out whether there is a regime where Mott insulating behavior can be found without longrange magnetic order. To this end, we study the above model in the range 1.2 ≤ t /t ≤ 2 using cluster dynamical mean-field theory (CDMFT). We argue that it is important to choose a symmetrypreserving cluster rather than a quasi one-dimensional cluster. We find that, upon increasing t /t beyond t /t ≈ 1.3, the Mott transition at zero-temperature is replaced by a first-order transition separating a metallic state from a collinear magnetic insulating state. Nevertheless, at the physically relevant value t /t 1.5, the transitions toward the magnetic and the Mott insulating phases are very close. The phase diagram obtained in this study can provide a working basis for moderately one-dimensional compounds on the anisotropic triangular lattice.

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“…Thus, understanding Mottness (or the proximity to a Mott-Hubbard insulating state) in materials with active p or s bands is undoubtedly an issue of great contemporary interest 32 . In light of the discussion above, we study how an orbital-selective interplay between appreciable p -band itinerance and sizable, on-site Coulomb repulsion, U , plays a central role in this unique Mott transition in solid O 2 .…”

Section: Introductionmentioning

confidence: 99%

Microscopic description of insulator-metal transition in high-pressure oxygen

Craco

Laad

Leoni

2017

Sci Rep

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Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are ill-understood metallic states in d- and f-band compounds near Mott-like transitions. Finding of superconductivity in solid O2 on the border of an insulator-metal transition at high pressures close to 96 GPa is thus truly remarkable. Neither the insulator-metal transition nor superconductivity are understood satisfactorily. Here, we undertake a first step in this direction by focussing on the pressure-driven insulator-metal transition using a combination of first-principles density-functional and many-body calculations. We report a striking result: the finding of an orbital-selective Mott transition in a pure p-band elemental system. We apply our theory to understand extant structural and transport data across the transition, and make a specific two-fluid prediction that is open to future test. Based thereupon, we propose a novel scenario where soft multiband modes built from microscopically coexisting itinerant and localized electronic states are natural candidates for the pairing glue in pressurized O2.

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Pressure-Induced Mott Transition in an Organic Superconductor with a Finite Doping Level

Cited by 60 publications

References 50 publications

High Pressure Induced Insulator-to-Semimetal Transition through Intersite Charge Transfer in NaMn7O12

High Pressure Induced Insulator-to-Semimetal Transition through Intersite Charge Transfer in NaMn7O12

Mott transition and magnetism on the anisotropic triangular lattice

Microscopic description of insulator-metal transition in high-pressure oxygen

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