Pressure-induced phase transformation of In2Se3

Rasmussen, Anya; Teklemichael, Samuel T.; Mafi, Elham; Gu, Yi; McCluskey, M. D.

doi:10.1063/1.4792313

Cited by 54 publications

(61 citation statements)

References 22 publications

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“…Furthermore, our detailed calculations confirm that the experimentally observed Raman active A1 mode undergoes a blue shift when the In 2 Se 3 structure transforms from the α phase to the β phase (Supplementary Fig. 4)1924. Additionally, we note that the metastable nature of the β phase is consistent with the experimental observation that it is reached at higher temperature from the α phase through a structural phase transition1725.…”

Section: Resultssupporting

confidence: 87%

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

et al. 2017

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Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In2Se3 and other III2-VI3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In2Se3/graphene, exhibiting a tunable Schottky barrier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications.

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Section: Resultssupporting

confidence: 87%

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

et al. 2017

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“…15,16 Despite great efforts on structural and electrical properties of In 2 Se 3 for decades, its ambient-condition structure remains confusing and contradictory. 10,[17][18][19][20] One possible reason is that X-ray diffraction (XRD) measurements in powders seem to be insensitive to closed symmetries, such as the centrosymmetric R-3m and noncentrosymmetric R3m symmetries. Furthermore, pressure or strain is a much more powerful controlling factor than temperature for driving transformations toward structures with higher density and smaller volume, and hence tuning properties of materials.…”

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confidence: 99%

Interlayer-glide-driven isosymmetric phase transition in compressed In2Se3

Liu

Gao

et al. 2014

Applied Physics Letters

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We report an anomalous phase transition in compressed In2Se3. The high-pressure studies indicate that In2Se3 transforms to a new isosymmetric R-3m structure at 0.8 GPa whilst the volume collapses by ∼7%. This phase transition involves a pressure-induced interlayer shear glide with respect to one another. Consequently, the outer Se atoms of one sheet locate into the interstitial sites of three Se atoms in the neighboring sheets that are weakly connected by van der Waals interaction. Interestingly, this interlayer shear glide changes the stacking sequence significantly but leaves crystal symmetry unaffected. This study provides an insight to the mechanisms of the intriguing isosymmetric phase transition.

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“…[8][9][10][11] By controlling the synthesis parameters or thermal/electrical pretreatment processes, several phases (superlattice, simple hexagonal -phase, simple hexagonal -phase, and amorphous state) with vastly different electrical conductivity can coexist at the ambient condition, [12][13][14] which explains the research interest of In2Se3 as a prototypical phasechange material. 7,[12][13][14][15][16][17][18] In addition, the lattice constant of In2Se3 matches well with Bi2Se3, which is heavily investigated for its high thermoelectric figure-of-merit and topological insulator nature.…”

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confidence: 99%

Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes

et al. 2015

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ABSTRACT:The dielectric constant or relative permittivity (r) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms, but also the specific atomic arrangement in the crystal lattice. In this letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nano-flakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured r increases monotonically as a function of the thickness and saturates to the bulk value at around 6 ~ 8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principle calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.KEYWORDS: microwave impedance microscopy, layer-dependent dielectric constant, In2Se3 nano-flakes, layered materials, polarization, first-principle calculations 2The rapid rise of graphene in the past decade has led to an active research field on twodimensional (2D) layered materials.1, 2 Of particular interest here are layered semiconductors, such as many metal chalcogenides, for their roles as gate dielectrics or channel materials in nextgeneration electronics. 3 Due to the strong intralayer covalent bonding and weak van der Waals (vdW) interactions, most physical properties are already anisotropic in the bulk form, with a clear 3D-2D crossover when approaching the monolayer thickness. In particular, the number of layers (n) in a thin-film 2D system is expected to strongly influence its dielectric constant, a fundamental electrical property that determines the capacitance and charge screening in electronic devices. 4-6The 2D material in this study is the layered semiconducting chalcogenide In2Se3, a technologically important system for phase-change memory, thermoelectric, and photoelectric applications 7 . The In-Se phase diagram is among the most complex ones in binary compounds.Even at the exact stoichiometry of In:Se = 2:3, multiple phases can occur under different temperatures and pressures. [8][9][10][11] By controlling the synthesis parameters or thermal/electrical pretreatment processes, several phases (superlattice, simple hexagonal -phase, simple hexagonal -phase, and amorphous state) with vastly different electrical conductivity can coexist at the ambient condition, 12-14 which explains the research interest of In2Se3 as a prototypical phasechange material. 7,[12][13][14][15][16][17][18] In addition, the lattice constant of In2Se3 matches well with Bi2Se3, which is heavily investigated for its high thermoelectric figure-of-merit and ...

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Pressure-induced phase transformation of In2Se3

Cited by 54 publications

References 22 publications

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Interlayer-glide-driven isosymmetric phase transition in compressed In2Se3

Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes

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Pressure-induced phase transformation of In2Se3

Cited by 54 publications

References 22 publications

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Interlayer-glide-driven isosymmetric phase transition in compressed In2Se3

Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes

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Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes