Pressure-induced phase transition in GaAs under shock compression

Goto, Tsueneaki; Syono, Yasuhiko; Nakai, Jun; Nakagawa, Yasuaki

doi:10.1016/0038-1098(76)90404-x

Cited by 22 publications

(2 citation statements)

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“…Vogler et al have however noted that the material after the hypothetical phase transition is similar to undeformed boron carbide (figure 1(a)) [8] for dynamic loading. Moreover, in materials that show a polymorphic phase transition under shock, like sapphire [9,10,11] or GaAs [12,13], the crystal-to-crystal phase transition also occurs upon reversible loading under static conditions, for instance in a diamond anvil cell [14]. However, X-ray diffraction results have not provided any evidence of a phase transition in boron carbide under reversible loading: the cell parameters decrease monotonically [15].…”

Section: Introductionmentioning

confidence: 99%

Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime

et al. 2022

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Section: Introductionmentioning

confidence: 99%

Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime

et al. 2022

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“…Therefore there is no characterisation of the hypothetical high-stress phase is inadequate. Moreover, in materials that show a polymorphic phase transition under shock, like sapphire [8][9][10] or GaAs [11,12], the crystal-to-crystal phase transition also occurs upon reversible loading under static conditions, for instance in a diamond anvil cell [13]. However, X-ray diffraction results have not provided any evidence of a phase transition in boron carbide under reversible loading: the cell parameters decrease monotonically [14].…”

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confidence: 99%

Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime

Chakraborti¹,

Jay²,

Duparc³

et al. 2021

Preprint

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We report a combined experimental and theoretical study of boron carbide under stress/deformation. A special rotating anvil press, the rotating tomography Paris Edinburgh cell (RotoPEC), has been used to apply torsional deformation to boron carbide under a pressure of 5 GPa at ambient temperature. Subsequent damages and point defects have been analysed at ambient pressure by energy dispersive X-ray microdiffraction at the synchrotron and by Raman spectroscopy, combined with calculations based on the density functional theory (DFT). We show that apart from the signals due to B 4 C, new peaks appear in both characterisation methods. The DFT calculations of atomic structures and phonon frequencies enable us to attribute most of the new peaks to boron vacancies in the intericosahedral chains of boron carbide. Some of the Raman spectra also show three peaks that have been attributed to amorphous boron carbide in the literature. Deformed boron carbide thus shows small inclusions of clusters of boron carbide with chain vacancies, and/or small zones interpreted as amorphous zones.

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Phonon Dispersion Curves near the Covalent‐Metallic Transition Pressure of GaAs, GaSb, and InSb

Soma

Saito

Matsuo

1981

Physica Status Solidi (b)

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Recently w e /1/ have studied the lattice dynamics under pressure of Si and Ge using the higher-order perturbation and the local Heine-Abarenkov model potential. Then, we have estimated the phonon dispersion curves at the metallic transition pressure using Griineisen parameters of the individual modes of phonons in the phenomenological theory where the experimentally observed temperature dependence of the thermal expansion coefficient, i. e. the Gruneisen constant was reproduced. Both the perturbational theory from first principle and the phenomenological treatment represented the common characteristics of the lattice dynamics under pressure of S i and Ge, and the latter treatment is very useful to estimate the lattice dynamics under pressure of other covalent compounds.When extending our previous treatment from the diamond-type crystals to

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Pressure-induced phase transition in GaAs under shock compression

Cited by 22 publications

References 10 publications

Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime

Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime

Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime

Phonon Dispersion Curves near the Covalent‐Metallic Transition Pressure of GaAs, GaSb, and InSb

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