2017
DOI: 10.1016/j.jallcom.2016.10.120
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Pressure induced structural and optical properties of cubic phase SnSe: An investigation for the infrared/mid-infrared optoelectronic devices

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Cited by 57 publications
(22 citation statements)
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“…In parallel, multiple studies of potential applications have explored the use of this cubic phase of monochalcogenides in solar cells, [7] for thermoelectric conversion [8] and as a high performance near infrared photodetector for SnS [9,10] and for SnSe. [6] These studies demonstrate the breadth of potential applications and the usability of this novel cubic phase in cases where the large band gap semiconducting property and nanoscale structures are valuable advantages in next generation devices.…”
Section: Introductionmentioning
confidence: 87%
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“…In parallel, multiple studies of potential applications have explored the use of this cubic phase of monochalcogenides in solar cells, [7] for thermoelectric conversion [8] and as a high performance near infrared photodetector for SnS [9,10] and for SnSe. [6] These studies demonstrate the breadth of potential applications and the usability of this novel cubic phase in cases where the large band gap semiconducting property and nanoscale structures are valuable advantages in next generation devices.…”
Section: Introductionmentioning
confidence: 87%
“…Materials modelling of the recently discovered cubic monochalcogenides, [1] also known as π-phase semiconductors, is a subject of extensive study worldwide in recent years. [2,3,4,5,6] The conventional stable phase for this group of materials is the layered orthorhombic structure with 8 atoms per unit cell with the space group Pnma, see Figure 1. Ever since the discovery of this novel cubic phase in tin monosulfide in 2015 by Rabkin et al [1] it has challenged our imagination to explore how and why such a low symmetry cubic phase consisting of 64 atoms in the unit cell is formed and what are its properties.…”
Section: Introductionmentioning
confidence: 99%
“…It is noticeable that π-SnSe exhibits a higher value of ZT (~1.0) at relatively low temperature (200 K) when compared to the orthorhombic SnSe[206]. Other computational calculations based on first-principles pseudopotential method showed that the bandgap of π-SnSe decreased from ~1.0 eV to ~0 eV when external hydrostatic pressure was applied and increased from 0 GPa to 40 GPa[207].…”
mentioning
confidence: 99%
“…The refractive index of Sb2Te3 was recently calculated by Lawal et al [71] to be 7.482 which again is close to our result of 7.07. Rehman et al [93] calculated the pressure dependence of the refractive index n of SnSe. The refractive index ranges 3.18 to 8.74 for pressure between 0 to 40 GPa.…”
Section: Optical Propertiesmentioning
confidence: 99%