2016
DOI: 10.7566/jpsj.85.063701
|View full text |Cite
|
Sign up to set email alerts
|

Pressure-Induced Valence Transition and Characteristic Electronic States in EuRh2Si2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
13
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
3

Relationship

3
6

Authors

Journals

citations
Cited by 35 publications
(13 citation statements)
references
References 18 publications
0
13
0
Order By: Relevance
“…In EuRh 2 Si 2 , the magnetic susceptibility data at µ 0 H = 1 T exhibit anisotropic features below about 100 K (≫ T N = 23.8 K), and the anisotropy ratio becomes χ [100] /χ [001] ≃ 2.5 at 1.8 K. In addition, the magnetization curves also show a large anisotropy, which is reflected in the difference of saturation magnetic fields: H [100] c ≃ 2.5 T and H [001] c ≃ 10 T. Note that the anisotropic magnetism was also reported for other Eu-based ThCr 2 Si 2 compounds such as EuCo 2 Ge 2 [8,9], EuRh 2 Ge 2 [10], EuIr 2 Si 2 [11], and EuNi 2 Ge 2 [10]. Among these compounds, the pressure-induced valence transition was observed in EuRh 2 Si 2 [2,3], EuNi 2 Ge 2 [12,13], and EuCo 2 Ge 2 [14] at P v ≃ 1, 2, and 3 GPa, respectively. It is interesting whether there is a relationship between the proximity to the valence transition and the large magnetic anisotropy or not, and this is left as a future study.…”
Section: Resultsmentioning
confidence: 62%
See 1 more Smart Citation
“…In EuRh 2 Si 2 , the magnetic susceptibility data at µ 0 H = 1 T exhibit anisotropic features below about 100 K (≫ T N = 23.8 K), and the anisotropy ratio becomes χ [100] /χ [001] ≃ 2.5 at 1.8 K. In addition, the magnetization curves also show a large anisotropy, which is reflected in the difference of saturation magnetic fields: H [100] c ≃ 2.5 T and H [001] c ≃ 10 T. Note that the anisotropic magnetism was also reported for other Eu-based ThCr 2 Si 2 compounds such as EuCo 2 Ge 2 [8,9], EuRh 2 Ge 2 [10], EuIr 2 Si 2 [11], and EuNi 2 Ge 2 [10]. Among these compounds, the pressure-induced valence transition was observed in EuRh 2 Si 2 [2,3], EuNi 2 Ge 2 [12,13], and EuCo 2 Ge 2 [14] at P v ≃ 1, 2, and 3 GPa, respectively. It is interesting whether there is a relationship between the proximity to the valence transition and the large magnetic anisotropy or not, and this is left as a future study.…”
Section: Resultsmentioning
confidence: 62%
“…T v increases linearly at higher pressures with increasing pressure. Recently, Honda and coworkers succeeded in growing single crystals of EuRh 2 Si 2 by the Bridgman method and studied their electronic properties by measuring the electrical resistivity under pressure [3]. The very clear firstorder transition at T v terminates at the critical end point with P CEP = 2.05 GPa and T CEP = 170 K. As for the bulk magnetic properties, much less work has been done on the single crystals of EuRh 2 Si 2 [4].…”
Section: Introductionmentioning
confidence: 99%
“…In these compounds the Eu valence change dramatically in comparison with the most Ce-and Yb-based compounds in the same temperature region [74,75]. Usually, the FOVT transition is observed in such systems [76,77]. The phase diagram of YbNiC 2 also has a form similar to the well-known YbInCu 4 compound mentioned in Sec.…”
Section: Discussion Of the Resultsmentioning
confidence: 70%
“…Polycrystalline samples of Eu(Rh 1-x Co x ) 2 Si 2 for x = 0.4 and Eu(Rh 1-x Ir x ) 2 Si 2 for x = 0.4, 0.5 were grown by argon arc melting [11,12]. A single crystal of EuRh 2 Si 2 was grown by the Bridgman method [15].…”
Section: Methodsmentioning
confidence: 99%