Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD

Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method

“…In addition, although Te phonon modes (the most common examples being the A1 mode at 122 cm −1 and the E2 mode at 142 cm −1 ) have been reported in other works of undoped ZnTe films [ [27] , [28] , [29] ], no similar results were found in this study. This may be because for Cu doped ZnTe films, excess Te is prone to combine with Cu to form Cu x Te, which is consistent with the results of XRD.…”

Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films

“…2) show that all the ZnTe thin films (with or without immersion in phosphoric acid) prepared at the same substrate temperature and having almost the same thickness are present as a crystalline structure composed of cubic phase with a (111) preferred orientation. This structure and preferred orientation are common for ZnTe films deposited with a wide variety of techniques [1][2][3][4][5][6][7][8][9][10][11][12]. No notable changes in film structure or orientation were observed after immersion in phosphoric acid as in Fig.…”

“…For allowed direct transition, α varies with photon energy (hν) as the well-known dependence α~(hν-E g ) 1/2 . Near the absorption edge, the optical energy gap (E g ) is obtained by extrapolating (α) 2 against the photon energy plot as in Fig. 6.…”

“…Polycrystalline compound semiconductors films of are considerable technological importance and play a major role in electronic devices. ZnTe is one of the group II-VI semiconductors having a wide range of applications such as green light emitting diodes [1,2] due to its excellent electrical and optical properties. ZnTe is a p-type semiconductor with a direct band gap of 2.26 eV and a zinc-blend structure [3,4].…”