Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Li, Hung‐Wei; Chang, Chih-Wei

doi:10.1038/s41598-019-39786-y

Cited by 4 publications

(3 citation statements)

References 30 publications

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“…SiO 2 is the most suitable matrix because of its compatibility with the CMOS technology and because it forms the best interface with Si substrate. These efforts are made with the purpose of improving the optoelectronic devices on Si and enabling the SiGe NCs integration in a large area of applications such as non-volatile memories [18][19][20] , GeSi based high-mobility transistors 21 , photo-MOSFETs 22 , solar cells [23][24][25] , thermoelectric applications 26 and high-performance photodetectors 7,[27][28][29][30] .…”

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confidence: 99%

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

Stavarache

Logofatu

Sultan

et al. 2020

Sci Rep

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Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 103 times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 °C annealed films to 1210 nm for those at 1000 °C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 °C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW−1.

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confidence: 99%

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

Stavarache

Logofatu

Sultan

et al. 2020

Sci Rep

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“…In this section, the technique presents the simulation models developed for the LPE growth of binary Si–Ge systems. 114 Nevertheless, under LPE condition, lattice disparities higher than 1% are identified to restrict the nucleation of epitaxial layers. The schematic of the LPE technique is shown in Fig.…”

Section: Synthesis Methods For Si–ge Alloy Using Bulk Crystal Growthmentioning

confidence: 99%

“…In this section, the technique presents the simulation models developed for the LPE growth of binary Si-Ge systems. 114 Nevertheless, under LPE…”

Section: Materials Advances Reviewmentioning

confidence: 99%

A review on single crystal and thin film Si–Ge alloy: growth and applications

Basu

2022

Mater. Adv.

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Liquid‐Phase Epitaxy

Mauk¹

2023

Digital Encyclopedia of Applied Physics

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Liquid‐phase epitaxy (LPE) is a crystal growth method that produces single‐crystal films or layers of semiconductors and other types of materials on a supporting substrate. LPE‐grown structures include light‐emitting diodes (LEDs), laser diodes, and photodetectors; energy conversion devices such as photovoltaic cells, and various magnetic and optical devices. LPE is typically affected by solidifying a film comprising solute components precipitated from a molten metallic solution at temperatures ranging from several hundred to >1200 °C. A common LPE technology is based on a crucible slider apparatus in a temperature‐programmed furnace with a hydrogen ambient at atmospheric pressure. Multiple layer depositions generate a wide range of structures, and LPE has proven especially useful for III–V compound semiconductor heterostructures. Present‐day uses of LPE stem from favorable features such as fast growth rates, low defect densities, a wide choice of impurity dopants, and straightforward formulations based on phase equilibria and kinetics data and models. While LPE was a prominent epitaxy technology in the 1970s and 1980s, nowadays LPE is relegated to niche applications. Compared to competing epitaxy technologies such as molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), LPE falls short with regard to the achievement of ultrathin layered structures, strained or lattice‐mismatched structures, abrupt interfaces, and areal uniformity. Still, there are significant application areas well served by LPE or by modified LPE techniques, as reviewed here.

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Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Cited by 4 publications

References 30 publications

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

A review on single crystal and thin film Si–Ge alloy: growth and applications

Liquid‐Phase Epitaxy

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