Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET

Kumar, G. Saiphani; Raman, Ashish

doi:10.1016/j.spmi.2016.10.010

Cited by 12 publications

(3 citation statements)

References 16 publications

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“…Thus, lowering the electron velocity for rhodium-based SE-JAM-NW FET than other contemplated catalytic metals. 37 Figure 7 demonstrates the variance in recombination rate for various catalytic metals in On-state for the proposed structure. Recombination of electrons and holes are seen to be minimal on the source and drain sides.…”

Section: Resultsmentioning

confidence: 99%

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Neeraj,

Sharma,

Goel

et al. 2024

ECS J. Solid State Sci. Technol.

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A stack-engineered junctionless accumulation nanowire FET (SE-JAM-NW FET) is proposed for low-power and high-sensitivity phosphine (PH3) gas detection applications. Compared to a standard nanowire field-effect transistor, SE-JAM-NW FET is used at nanoscale dimensions because of its inherent benefits, including low cost, improved portability, low Off- state current, and increased On-state current with low power consumption. To implement SE-JAM-NW FET as a phosphine gas sensor, four catalytic metals, Platinum (Pt), Rhodium (Rh), Iridium (Ir), and Palladium (Pd) have been employed as gate electrodes. In designing a gas sensor, various electric parameters like potential, electron concentration, recombination rate, and electron velocity were evaluated for PH3 gas detection. To forecast the sensor's response, analog characteristics like change in drain current, transconductance, and output conductance were simulated for different catalytic metal work functions (200, 150, 100, and 50 meV) at the gate electrode. The variation in On-state current to Off-state current ratio (IOn/IOff), On-state current (IOn), and subthreshold leakage current (IOff) for sensing gas molecules have been used to quantify sensitivity. Effects of silicon pillar-based radius variation and channel length variation on the sensitivity-based parameters were also investigated. Each catalytic metal exhibits improved sensitivity with increased channel length and decreased radius.

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Section: Resultsmentioning

confidence: 99%

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Neeraj,

Sharma,

Goel

et al. 2024

ECS J. Solid State Sci. Technol.

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“…NEMS is a potential candidate for evolving highly sensitive, and fast multiple sensors with high e ciency [9]. Gagan Kumar et al [10] have conferred for the rst time about the pressure sensor based on the MEMS nanocantilever beam as a gate electrode on charge plasma-based double-gate TFET. The pressure sensor based on MEMS technology needs a higher ON current, but charge plasma-based double-gate TFET offers poor ON current and parametric variations in transistor performance due to poor electrostatic control of the channel [11].…”

Section: Introductionmentioning

confidence: 99%

Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor

Singh

2023

Silicon

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In this paper, Si 0.5 Ge 0.5 source with charge plasma and gate stacked Nanowire Tunnel Field Effect Transistor (CP-GS-NWTFET) based pressure sensor is proposed. The pressure sensor is one of the essential components in sensing and actuating applications. Nanocavity is created beneath the gate electrode for possible bending due to the pressure applied. The presented sensor is based on the capacitive gate coupling principle, owing to which the tunneling current is changed. The applied pressure on the nanocantilever (hanging gate electrode towards the cavity) bends the nanocantilever which changes the electrical characteristics of the device. Various bending of the nanocantilever beam used are 0.5, 1, 1.5, and 2nm. Several device parameters including electric eld, potential, carrier concentration, energy band diagram, I on /I off ratio, subthreshold slope, etc. are evaluated as performance parameters of the presented device. The sensitivity is de ned as the change in the current ratio per nm of bending with respect to a structure having no bending. The study reveals that the presented pressor sensor is more sensitive for lower bendings. The sensitivity for 0.5nm and 2nm of bending is 2.74×10 08 /nm and 4.73×10 07 /nm respectively. Simulation unearths a remarkable connection between hypothetical and practical accepts of formation. The total length of the proposed device, CP-GS-NWTFET is 92 nm.

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“…Typical applications of piezoresistive cantilever biosensors include the detection of viruses [1], cancer cells [2], cardiac disease markers [3], DNA sequencing [4], etc. The literature encompasses examples where a few researchers have performed meticulous material selection and geometrical optimization of NEMS devices to maximize their device performance metrics [5][6][7][8][9][10]. Based on the material, piezoresistive cantilever surface stress sensors are broadly classified as either polymer-based sensors, such as SU-8 [11] or parylene [12], or solid-state semiconductors, such as silicon [13], silicon nitride [14] and silicon dioxide [15] based sensors.…”

Section: Introductionmentioning

confidence: 99%

Optimization of a nano-cantilever biosensor for reduced self-heating effects and improved performance metrics

Mathew

Sankar

2018

J. Micromech. Microeng.

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Over the last decade, surface stress-based piezoresistive cantilever biosensors have been extensively explored as a potential alternative for conventional clinical diagnostic techniques. The design of piezoresistive cantilever sensors is a complex multi-variable problem which involves the interplay between the thermal, electrical and mechanical design aspects of their constituent materials and geometry. Even though the literature includes examples where researchers have devised designs of piezoresistive cantilever biosensors, a majority of them have focused primarily on improving the electrical sensitivity by either dimensional optimization or material changes of their constituent layers. However, there are two important aspects of the sensor design which have been seldom addressed: (i) the negative impact of the transverse section of the U-shaped piezoresistor on the electrical sensitivity, and (ii) thermal drift in the output characteristics of the sensor. Although a few researchers have focused on the aforementioned factors, they have analysed them independently without considering their interdependence and cumulative impact on the sensor performance. In this paper, we devise a dual material multi-part U-shaped piezoresistor comprised of two p-type single crystalline silicon longitudinal sections and a p-type polysilicon transverse section. Evaluation of the proposed piezoresistor is performed in two stages using a finite element method-based numerical tool. In the first stage, the performance of the sensor with the multi-part piezoresistor is compared with the reported piezoresistors available in the literature. In the second stage, a comprehensive investigation of the multi-part piezoresistor is carried out to maximize the sensor performance. Results show that, compared to a conventional U-shaped piezoresistor, the proposed piezoresistor achieves improvement in the sensitivity ratio by 8.12 times.

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Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET

Cited by 12 publications

References 16 publications

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor

Optimization of a nano-cantilever biosensor for reduced self-heating effects and improved performance metrics

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Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET

Cited by 12 publications

References 16 publications

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector

Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor

Optimization of a nano-cantilever biosensor for reduced self-heating effects and improved performance metrics

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Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector

Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH₃ Gas Detector