Pressure threshold and dynamics of nucleation for Si nano-crystal grains prepared by pulsed laser ablation

Abstract

Si nano-crystal grains are prepared by pulsed laser ablation in low pressure Ar at room temperature through changing the gas pressure and the distance between target and substrate. The morphologies and compositions of samples are characterized by scanning electron microscopy images, Raman scattering spectra and X-ray diffraction spectra.The pressure threshold for Si grain formation is obtained to be 0.6 Pa at a laser fluence of 4 J/cm2, distance between target and substarate of 3 cm, and room temperature.Combining the fluid mechanics model and the nucleation division model, the dynamics process of nucleation is analyzed.The Monte Carlo simulation shows that the nucleation of nano-crystal grains is determined jointly by temperature and supersaturated density.