Pressure-tunable magnetic topological phases in magnetic topological insulator MnSb4Te7

Gao, Lingling; Wu, Juefei; Xi, Ming; Pei, Cuiying; Wang, Qi; Zhao, Yi; Tian, Shangjie; Li, Changhua; Cao, Weizheng; Chen, Y. L.; Lei, Hechang; Qi, Yanpeng

doi:10.1063/5.0146605

Cited by 5 publications

(3 citation statements)

References 48 publications

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“…Furthermore, apart from the temperature challenge, effective regulation of the topological state of Chern insulators is another crucial concern. To regulate the topological band structure, various control techniques have been developed, including material strain, applied voltage, quantum wells, and other methods [5,6,27,28]. For Chern insulators, magnetic order introduces a new degree of freedom, and variations in magnetic order can alter the material's symmetry.…”

Section: Introductionmentioning

confidence: 99%

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

Huang,

Li,

Zhao

et al. 2024

J. Phys.: Condens. Matter

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The quantum anomalous Hall (QAH) insulator is a vital material for the investigation of emerging topological quantum effects, but its extremely low working temperature limits experiments. Apart from the temperature challenge, effective regulation of the topological state of QAH insulators is another crucial concern. Here, by first-principles calculations, we find a family of stable two-dimensional (2D) materials TlTiX (X = Si, Ge) are large-gap QAH insulators. Their extremely robust ferromagnetic ground states are determined by both the direct- and super-exchange ferromagnetic coupling. In the absence of spin orbit coupling (SOC), there exist a spin-polarized crossing point located at each K and K′ points, respectively. The SOC effect results in the spontaneous breaking of C2 symmetry and introduces a mass term, giving rise to a QAH state with sizable band gap. The tiny magnetocrystalline anisotropic energy (MAE) implies that an external magnetic field can be easily used to align magnetization deviating from z direction to the x-y plane, thereby leading to a transformation of the electronic state from the QAH state to the Weyl half semimetals (WHSM) state, which indicate monolayers TlTiX (X = Si, Ge) exhibit a giant magneto topological band effect. Finally, we examined the impact of stress on the band gap and MAE,which underlies the reasons for the giant magneto topological band effect attributed to the crystal field. These findings present novel prospects for the realization of large-gap QAH states with the characteristic of easily modifiable topological states.

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Section: Introductionmentioning

confidence: 99%

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

Huang,

Li,

Zhao

et al. 2024

J. Phys.: Condens. Matter

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“…[11] When compared to the intensively studied intrinsic antiferromagnetic TI MnBi 2 Te 4 , the isostructural MnSb 2 Te 4 grown by different growth methods can exhibit either antiferromagnetic (AFM) or ferromagnetic (FM) ground state, which can be ascribed to the different antisite defects of Mn Sb/Bi and Mn content at Mn site Mn Mn . [12] Furthermore, for Mn(Sb 1−x Bi x ) 2 Te 4 single crystals grown by self-flux method, they exhibit AFM ground state in the whole doping range, [13][14][15][16][17][18] but for Mn(Sb 0.76 Bi 0.24 ) 2 Te 4 single crystal grown by chemical vapor transport (CVT) method, it shows ferromagnetism at low temperature. [19] In order to understand the influences of different growth methods on properties of Mn(Sb 1−x Bi x ) 2 Te 4 , in the present work, we carried out a detailed study on the evolution of magnetism in CVT-grown Mn(Sb 1−x Bi x ) 2 Te 4 single crystals and analyze the relationships between disorder, magnetism and band topology in these materials.…”

Section: Introductionmentioning

confidence: 99%

Relationship between disorder, magnetism and band topology in Mn(Sb_1–xBi_x)₂Te₄ single crystals

Xi 席,

Lei 雷

2024

Chinese Phys. B

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We investigate the evolution of magnetic properties as well as the content and distribution of Mn for Mn(Sb1-x Bi x )2Te4 single crystals grown by large-temperature-gradient chemical vapor transport method. It is found that the ferromagnetic MnSb2Te4 changes to antiferromagnetism with Bi doping when x ≥ 0.25. Further analysis implies that the occupations of Mn ions at Sb/Bi site MnSb/Bi and Mn site MnMn have a strong influence on the magnetic ground state of these systems. With the decrease of MnMn and increase of MnSb/Bi, the system will favor the ferromagnetic ground state. In addition, the rapid decrease of T C/N with increasing Bi content when x ≤ 0.25 and the insensitivity of T N to x when x > 0.25 suggest that the main magnetic interaction may change from the Ruderman-Kittel-Kasuya-Yosida-type at low Bi doping region to the van-Vleck-type in high Bi doped samples.

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“…The schematic plot of the DAC electrical transport measurement device can be found in Refs. [36,37]. A cubic BN/epoxy mixture layer was inserted between BeCu gaskets and Pt electrical leads as an insulator layer.…”

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confidence: 99%

Pressure-Tunable Large Anomalous Hall Effect in Ferromagnetic Metal LiMn₆Sn₆

Gao 高,

Lai 赖,

Chen 陈

et al. 2024

Chinese Phys. Lett.

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Recently, the giant intrinsic anomalous Hall effect (AHE) has been observed in the materials with kagome lattice. In this study, we systematically investigate the influence of high pressure on the AHE in the ferromagnet LiMn6Sn6 with clean Mn kagome lattice. Our in-situ high-pressure Raman spectroscopy indicates that the crystal structure of LiMn6Sn6 maintains a hexagonal phase under high pressures up to 8.51 GPa. The anomalous Hall conductivity (AHC) σxy A remains around 150 Ω-1 cm-1, dominated by the intrinsic mechanism. Combined with theoretical calculations, our results indicate that the stable AHE under pressure in LiMn6Sn6 originates from the robust electronic and magnetic structure.

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Pressure-tunable magnetic topological phases in magnetic topological insulator MnSb4Te7

Cited by 5 publications

References 48 publications

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

Relationship between disorder, magnetism and band topology in Mn(Sb_1–xBi_x)₂Te₄ single crystals

Pressure-Tunable Large Anomalous Hall Effect in Ferromagnetic Metal LiMn₆Sn₆

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Pressure-tunable magnetic topological phases in magnetic topological insulator MnSb4Te7

Cited by 5 publications

References 48 publications

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

Magnetization direction-controlled topological band structure in TlTiX (X = Si, Ge) monolayers

Relationship between disorder, magnetism and band topology in Mn(Sb1–x Bi x )2Te4 single crystals

Pressure-Tunable Large Anomalous Hall Effect in Ferromagnetic Metal LiMn6Sn6

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Product

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Relationship between disorder, magnetism and band topology in Mn(Sb_1–xBi_x)₂Te₄ single crystals

Pressure-Tunable Large Anomalous Hall Effect in Ferromagnetic Metal LiMn₆Sn₆