Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate

Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism

“…在晶体外延生长领域, 定向附着生长又可以称 为 外 延 横 向 生 长 (Epitaxial Lateral Overgrowth, ELO) [81] 。根据 ELO 原理所延伸出的图形化生长方 法(Patterned Nucleation and Growth, PNG), 可以有 效地减少 Ir 和金刚石界面处贯穿位错的产生 [82] 。该 过程的主要步骤为: 在已经完成形核步骤的金刚石 薄膜表面覆盖点状或条纹状 Au [83] 、Ni [84] 等材料的模 板层(图 3(d1)), 利用等离子体刻蚀该表面(图 3(d2)), 或在金刚石形核后利用光刻将表面刻蚀成以 Ir 为生 长模板、金刚石核为边框的栅格网络 [85] , 再继续之 后的生长过程 [71] (图 3(d3) 85] , 与马赛克法同质外延 生长的金刚石在非边缘接缝处测得的数值在同一数 量级(面内倾斜角 Δω = 0.012°) [89] 。…”

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

“…6,7 Fluorine ions have been employed to induce a high density of free holes in the near-surface layer of GaN, 8 proving beneficial for micro-LED applications by isolating the emitting area and improving electronic properties. 9,10 N ion implantations have found applications in transferring GaAs into a GaN nanolayer, 11 epitaxial lateral overgrowth processes, 12 current block layer formation, 13 and GaN sidewall treatment. 14 Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN.…”

“…Different types of ions have been employed to enhance specific applications. Argon ion implantation has been utilized to create a nano-air void structure on both GaN layers and sapphire substrates. , Fluorine ions have been employed to induce a high density of free holes in the near-surface layer of GaN, proving beneficial for micro-LED applications by isolating the emitting area and improving electronic properties. , N ion implantations have found applications in transferring GaAs into a GaN nanolayer, epitaxial lateral overgrowth processes, current block layer formation, and GaN sidewall treatment . Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN. , Ion implantation processes have also been employed in resonant-cavity LEDs (RC-LEDs) and vertical-cavity surface-emitting lasers (VCSELs).…”