PREVAIL Alpha system: Status and design considerations

Golladay, S. D.; Pfeiffer, H. C.; Rockrohr, James Donald; Stickel, W.

doi:10.1116/1.1314381

Cited by 14 publications

(8 citation statements)

References 5 publications

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“…Among them, the best performing is electron-beam lithography (EBL) due to its high spatial resolution down to 10-20 nm [83], or X-ray lithography (XRL, with resolution of about 100 nm) [84]. Achieving such confinement will overcome the limitation of conventional waveguides, by changing the way in which the energy of the wave is transported.…”

Section: Plasmonic Nanostructuresmentioning

confidence: 99%

Metal Nanoclusters for Optical Properties

Mattei

Mazzoldi

Bernas

2009

Topics in Applied Physics

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This chapter is focused on the use of ion beam processing for controlling the linear and nonlinear optical properties of different nanostructures based on metallic clusters embedded in silica. Three case studies will be presented: the first is the modification of the surface plasmon resonance of metallic nanoclusters by direct implantation or irradiation. The second is the far-field and local-field modification by means of controlled ion irradiation of bi-metallic nanoclusters. The last example deals with the synthesis of ordered plasmonic nanostructures using ion implantation and/or irradiation. These three examples are a sort of hierarchical approach to the control of the optical properties of nanostructures based on nanoparticles, starting from the synthesis of the functional building block of our approach, i.e. randomly positioned metal nanoparticles in silica, to end at the last level with the formation by ion implantation ordered arrays (chains or planar 2D assembly). In all these examples, ion implantation demonstrates to be not only a simple synthesis technique, but a very powerful processing tool for obtaining new functional properties. A brief description of the theoretical approach to the comprehension of the light-particle interaction from a semi-classical point of view will be given to aid the interpretation of the experimental results

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Section: Plasmonic Nanostructuresmentioning

confidence: 99%

Metal Nanoclusters for Optical Properties

Mattei

Mazzoldi

Bernas

2009

Topics in Applied Physics

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“…High-resolution electron-beam lithography (EBL), which can provide nanometer scale resolution by direct write methods and potentially high throughput imaging by electron projection methods, is a promising technology for both photomask making and potentially advanced device fabrication. [4][5][6][7] However, all of these techniques require use of a photoresist material that is capable of translating the radiation patterns produced by such exposure tools into a physical relief image, and unfortunately current resist materials and resist material designs do not appear to be able to provide the required set of performance metrics for future device nodes.…”

Section: Introductionmentioning

confidence: 99%

Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists

et al. 2007

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Substantially improved photoresist material designs, which can provide higher photosensitivity and precise critical dimension and edge roughness control, will be required to enable the application of next generation lithography technology to the production of future sub-65 nm node IC device generations. The development and characterization of novel material platforms that solve the aforementioned basic problems with chemically amplified resists (CARs) is essential and is already one of the major subjects of modern lithography research. In that regard, we have pursued development of a variety of 193 nm and EUV CARs that contain photoacid generator (PAG) units covalently bonded directly to the resin polymer backbone. However, the detailed structure-property relationships that result from this direct attachment of the PAG functional group to the polymer have previously not yet been rigorously characterized. In this work, the lithographic properties of a polymer-bound PAG CAR (GBLMA-co-EAMA-co-F4-MBS.TPS) and its blended-PAG analog resist (GBLMA-co-EAMA blend F4-IBBS.TPS) were studied and compared. The direct incorporation of PAG functionality into the resist polymer, where the resulting photoacid remains bound to the polymer, showed improved photosensitivity, resolution, and lower LER as compared with the analogous blended-PAG resist. The improved resolution and LER were expected due to the restricted photoacid diffusion and uniform PAG distribution provided by direct incorporation of the PAG into the polymer backbone to make a single-component resist material. The ability to load higher levels of PAG into the resist provided by this PAG incorporation into the polymer, as compared to the low PAG concentrations attainable by traditional blending approaches, overcomes the sensitivity loss that should result from reduction in photoacid diffusivity and concomitant smaller acid-catalytic chain lengths. In fact, the polymer-bound PAG resist achieves a faster photospeed than the blended-PAG analog material under DUV radiation in the case of the materials reported here while still providing all of the aforementioned improvements such as the improved line edge roughness.

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“…[1][2][3][4][5][6] In these systems, electron beams passing through the first mask are widely deflected before they focus on the second mask. Thus, the aberration in the irradiation optics must be reduced to obtain high accuracy pattern delineation.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, this method is also useful for other projection-type lithographies of charged particles-like ion and electron beams. 2,3,7 …”

Section: Introductionmentioning

confidence: 99%

A method for evaluating aberration in the crossover image in mask irradiation optics of electron beam

Sohda

Ohta

Saitou

2002

Review of Scientific Instruments

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Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method Electron optical image correction subsystem in electron beam projection lithography Low energy electron-beam proximity projection lithography: Discovery of a missing link Lie algebraic aberration theory and calculation method for combined electron beam focusing-deflection systems A method for evaluating aberration in the crossover image in a cell projection lithography system has been developed. In an electron-beam lithography system of projection-type such as a cell projection lithography system, the aberration in the crossover image causes the electron beam to pass off-axis in the electron optics. Optical simulation has quantitatively shown that the aberration in the crossover image causes an electron-beam blur and a positioning error on a writing sample. The evaluating method consists of four square apertures and a mark-detection function in a cell projection system. By measuring each position of the images of the four square apertures on the writing sample at difference focuses, the aberration can be calculated. The field curvature and the astigmatism in a cell projection system were evaluated by using this method. The field curvature agrees with the simulation. In addition, the measurement of the effect of beam alignment is also demonstrated. It is thus concluded that the method can effectively evaluate the aberration in the crossover image. This method is also useful for other projection-type lithographies of charged particles-like ion and electron beams.

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PREVAIL Alpha system: Status and design considerations

Abstract: Scaled measurements of global space-charge induced image blur in electron beam projection systemElectron and ion optical design software for integrated circuit manufacturing equipment

Cited by 14 publications

References 5 publications

Metal Nanoclusters for Optical Properties

Metal Nanoclusters for Optical Properties

Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists

A method for evaluating aberration in the crossover image in mask irradiation optics of electron beam

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