Principles of Laser Heat-Mode Lithography

Wei, Jingsong

doi:10.1007/978-981-15-0943-8_2

Cited by 1 publication

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References 23 publications

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“…Fortunately, the heat-mode resist based on the thermal threshold effect can readily break through the optical diffraction limit, providing a novel idea for the direct laser writing nanolithography with low cost, high resolution, and simple operation. − Compared with the photoresist, the heat-mode resist possesses a broad spectral response and thus is not sensitive to the laser wavelength. The exposure process does not require any darkroom or yellow light environment . So far, various heat-mode resists have been investigated such as metallic glass, , polymeric photoresist, and copper–hydrazone–complex thin films .…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Corrosion Selectivity of NSb₂Te Thin Films in the H₃PO₄/HNO₃ Developer for Direct Laser Writing Nanolithography

Wei,

Shen,

Wang

et al. 2023

ACS Appl. Nano Mater.

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The SbTe thin film is a promising heat-mode resist for direct laser writing nanolithography owing to the simple fabrication procedure and clear phase change thermal threshold. However, the lower corrosion selectivity and still unclear developing mechanism restrain the further development of SbTe thin films in the lithography fields. This work reports the NSb 2 Te thin film as a promising heat-mode resist with a high corrosion selectivity of 500 in the H 3 PO 4 /HNO 3 developer. Moreover, nanoscale structures are successfully obtained with a linewidth of 150 nm and resolution of 50 nm. The microstructural evolution and electrochemical corrosion behavior of the NSb 2 Te thin film are investigated in detail, and the corrosion selectivity mechanism is further elucidated. Results reveal that the exposed NSb 2 Te thin film possesses Sb and Te hexagonal phases with a lower corrosion potential and charge transfer resistance, which is readily oxidized and corroded in HNO 3 /H 3 PO 4 solution. On the other hand, the as-deposited NSb 2 Te thin film will form N−Sb and N−Te bonds, possessing higher corrosion potential and charge transfer resistance. This results in the lower corrosion rate in HNO 3 /H 3 PO 4 solution. Therefore, the giant difference of microstructures and electrochemical behavior leads to the high corrosion selectivity of the NSb 2 Te thin film. The NSb 2 Te-based nanohole array is further fabricated to achieve tunable perfect absorption, and the maximum absorbance can reach 1.0 in the wavelength range of 400−800 nm. This work may provide a helpful reference for the investigation of the direct laser writing nanolithography mechanism and nanoscale functional devices.

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Section: Introductionmentioning

confidence: 99%

Mechanism of Corrosion Selectivity of NSb₂Te Thin Films in the H₃PO₄/HNO₃ Developer for Direct Laser Writing Nanolithography

Wei,

Shen,

Wang

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

Principles of Laser Heat-Mode Lithography

Cited by 1 publication

References 23 publications

Mechanism of Corrosion Selectivity of NSb₂Te Thin Films in the H₃PO₄/HNO₃ Developer for Direct Laser Writing Nanolithography

Mechanism of Corrosion Selectivity of NSb₂Te Thin Films in the H₃PO₄/HNO₃ Developer for Direct Laser Writing Nanolithography

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Principles of Laser Heat-Mode Lithography

Cited by 1 publication

References 23 publications

Mechanism of Corrosion Selectivity of NSb2Te Thin Films in the H3PO4/HNO3 Developer for Direct Laser Writing Nanolithography

Mechanism of Corrosion Selectivity of NSb2Te Thin Films in the H3PO4/HNO3 Developer for Direct Laser Writing Nanolithography

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Mechanism of Corrosion Selectivity of NSb₂Te Thin Films in the H₃PO₄/HNO₃ Developer for Direct Laser Writing Nanolithography

Mechanism of Corrosion Selectivity of NSb₂Te Thin Films in the H₃PO₄/HNO₃ Developer for Direct Laser Writing Nanolithography