Principles of plasma-activated chemical vapour deposition

Inspektor-Koren, Aharon

doi:10.1016/0257-8972(87)90174-5

Cited by 21 publications

(4 citation statements)

References 73 publications

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“…With the used frequency the argon and hydrogen ions can follow the temporal variations in applied potential [5,6]. The character of such a discharge raises basic questions about what occurs in the discharge; the gas temperature is generally assumed to be in the range 1000-2000 K [7].…”

Section: Methodsmentioning

confidence: 99%

The evolution of the translational energy of hydrogen atoms in a 2 MHz inductively coupled plasma deposition reactor

Andrieux

Badie

Ducarroir

et al. 1998

J. Phys. D: Appl. Phys.

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The analysis of the Balmer H and H emission line shapes in a 2 MHz radiofrequency Ar- glow discharge, used in a plasma-assisted CVD reactor, reveals anomalous Doppler profiles which indicate that atomic hydrogen has two kinds of average kinetic energies. These energies vary with the distance z to the grounded substrate and are -0.4 eV for the slow (low-energy) hydrogen and 6-24 eV for the other. Moreover, the Doppler broadenings observed for Ar, and lines lead always to energy values lower than 0.15 eV. From the optical emission signals and a relevant discussion, it is established that would be the origin of the fast hydrogen. Its energy would be limited by charge transfer between and whereas the slow molecular hydrogen would give rise to slow hydrogen by a dissociative excitation mechanism.

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Section: Methodsmentioning

confidence: 99%

The evolution of the translational energy of hydrogen atoms in a 2 MHz inductively coupled plasma deposition reactor

Andrieux

Badie

Ducarroir

et al. 1998

J. Phys. D: Appl. Phys.

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“…In the present study, Plasma Enhanced Chemical Vapour Deposition (PECVD) technique is chosen to overcome the thermal restrictions. The plasma activation has the advantage of reducing the deposition temperature from a range of 600-700˚C to 400˚C or even less [22]. In addition, this deposition technique has other benefits such as processing compatibility, which makes it possible to use the same method for the deposition of the gate dielectric as well as the active layers, minimising the process steps.…”

Section: Introductionmentioning

confidence: 99%

e-Information on Wires: A First Step toward Two-Terminal Silicon Nanowires for Electronic Memory Devices

Saranti

Paul

2019

ACS Appl. Electron. Mater.

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Presently, there is a rapid growth of interest in the area of flexible electronics. Benefits such as light weight, durability and low-cost are among the most appealing aspects. However, the high temperatures throughout the fabrication processes are still the main hurdle. In this study, the deposition of silicon nanowires (SiNWs) at low temperature (300˚C) using Tin (Sn) catalyst is studied. Silicon nanostructures have been the centre of research for many years for a number of applications in different areas. Chemical Vapour Deposition (CVD) and other industrial deposition techniques, for the growth of crystalline silicon microand nano-structures use high temperatures and therefore are not compatible with temperature sensitive substrates. This work utilises a low temperature deposition method for the growth of SiNWs and creates a leeway to use flexible plastic sheets as substrates. The silicon nanowires were deposited by exploiting the Vapour-Liquid-Solid (VLS) material growth mechanism using Plasma Enhanced Chemical Vapour Deposition (PECVD) technique. The suitability of these structures, as an information storage material, for future flash and two terminals non-volatile memory devices are investigated. Strong charge storage behaviour with a retention time up to 5 hours was observed showing great potential for the future memory candidate.

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“…Chlorosilanes are used extensively in semiconductor industry, , and the fragment cations of chlorosilanes are found in the processes of plasma-enhanced chemical vapor deposition − and chlorine-based plasma etching, − in which silicon monochloride cation (SiCl + ) is a crucial reactive intermediate. For example, during the silicon-etching process in chlorine-based plasmas, SiCl + plays a significant role in the deposition of silicon on the reactor wall, and can be neutralized and returned into the plasma.…”

Section: Introductionmentioning

confidence: 99%

Extensive Theoretical Study on Various Low-Lying Electronic States of Silicon Monochloride Cation Including Spin−Orbit Coupling

Liu

Bian

2009

J. Phys. Chem. A

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The potential energy curves of the 23 Omega states generated from the 12 valence Lambda-S states of silicon monochloride cation are calculated for the first time using the internally contracted multireference configuration interaction method with the Davidson correction and entirely uncontracted cc-pV5Z basis set. Spin-orbit coupling is taken into account by the state interaction approach with the full Breit-Pauli Hamiltonian. Very good agreement is achieved between our computed spectroscopic properties and the available experimental data. In particular, the adiabatic excitation energies of the a3Pi(0+) and a3Pi(1) states computed by us are 31,708 and 31,830 cm(-1), respectively, in excellent agreement with the respective experimental values of 31,721 +/- 2 and 31,836 +/- 3 cm(-1). The curve crossings and the predissociation mechanism are investigated. The transition dipole moments are analyzed and the transition properties of the a3Pi(0+)-X1Sigma(0+)+ and a3Pi(1)-X1Sigma(0+)+ transitions are predicted, including the Franck-Condon factors and the radiative lifetimes.

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Principles of plasma-activated chemical vapour deposition

Cited by 21 publications

References 73 publications

The evolution of the translational energy of hydrogen atoms in a 2 MHz inductively coupled plasma deposition reactor

The evolution of the translational energy of hydrogen atoms in a 2 MHz inductively coupled plasma deposition reactor

e-Information on Wires: A First Step toward Two-Terminal Silicon Nanowires for Electronic Memory Devices

Extensive Theoretical Study on Various Low-Lying Electronic States of Silicon Monochloride Cation Including Spin−Orbit Coupling

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