Abstract:Immersion lithography offers the semiconductor industry the chance to extend the current ArF processes to smaller nodes before switching to a shorter wavelength. The move to immersion will require increased attention to the photomask along with new effects influencing the aerial image formation as the numerical apertures (NA) of scanners move up to at least 0.93 and even higher. Feature sizes on the photomask become comparable or even smaller than the wavelength and hence act more like wire grid polaris ers wh… Show more
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