Printable Organic PIN Phototransistor and Its Application for Low Power and Noise Imaging Detection

Abstract

The power consumption and the opto-electric noise of organic photo-detectors are the challenges for large-scale detecting and imaging applications to surpass. This article presents a new device concept of organic heterojunction PIN channel for photo-transistor. The presence of the channel's heterostructure enables rectifying capability and effective control of defect density, which leads to low power consumption (0.12 to 7.5 nW) and low dynamic noise (4.5 × 10 13 Jones detectivity). Significantly, through adopting the highly efficient Perovskite Quantum Dots as intrinsic sensing core, the device exhibits high responsivity up to 7190 A/W. As we demonstrate a large-scale 10×20 imaging array with integrated photo-transistor, the output signals are read-out and rebuilt by I-V converting amplifier with analog-to-digital circuit and numerical computation method to visualize the functionality of the system.

New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

“…Owing to the low value of I GS (as shown in Figure S8), the energy consumption caused by the leakage current is neglected here. ,, The corresponding power consumption values are only 2.16 nW, 3.51 nW, 11.96 nW, 2.83 nW, and 0.019 nW, demonstrating the low-power-consumption photodetectors realized by adopting the fresh and easy-to-handle NW SGT. Figure e shows the power consumption of photodetectors working in the unsaturated and saturated regions in the literature. ,,,− , Obviously, the power consumption of the as-constructed SGT photodetector in this work is far below that of the reported photodetectors worked in the saturated region.…”

“…Figure 3e shows the power consumption of photodetectors working in the unsaturated and saturated regions in the literature. 6,8,9,[25][26][27][28][29]51 Obviously, the power consumption of the as-constructed SGT photodetector in this work is far below that of the reported photodetectors worked in the saturated region.…”

“…Because the carrier density of channel semiconductors can be modulated by both electrical gating and incident photon, the phototransistor is attracting many attentions in the past decades, exhibiting high photoconductive gain, detectivity ( D * ), and responsivity ( R I , defined by photocurrent). − After the success in high R I and D* , it is urgent to reduce the power consumption of as-constructed phototransistor for further large-scale photodetection and imaging applications. , Because of the built-in electrical field, the heterostructure phototransistor can work in a low driving drain voltage ( V DS ), which is considered to be a promising road to reduce power consumption. , Apart from the construction of the heterostructure, the fresh and easy-to-handle source-gated transistor (SGT) also shows low saturated voltage ( V SAT ), promising a low-power-consumption phototransistor. A SGT is typically realized by introducing a source barrier between channel and electrode, exhibiting ultrahigh gain, immunity to the short-channel effect, and lower power consumption. − The drain current ( I DS ) will rapidly increase with the increase of V DS at a certain gate voltage ( V GS ), while the depletion region will gradually get closer to the semiconductor/dielectric interface .…”

“…(d) The R I , D* , and power consumption of as-constructed SGT photodetector as a function of the incident intensity under the illumination of 635 nm laser. (e) Power consumption of phototransistors worked in the unsaturated and saturated region in the literatures (NiO/CdHgTe/IGZO, C60/CsPbBr 3 /NiO, PEDOT:PSS/SnO x /IGZO, Bi 2 O 2 Se, IGZO:H/IGZO, In 2 Se 3 , ZnO/SnO 2 , ZnO, P3HT/IGZO, N,N′-bis­(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI)).…”

“…1−5 After the success in high R I and D*, it is urgent to reduce the power consumption of as-constructed phototransistor for further large-scale photodetection and imaging applications. 6,7 Because of the built-in electrical field, the heterostructure phototransistor can work in a low driving drain voltage (V DS ), which is considered to be a promising road to reduce power consumption. 8,9 Apart from the construction of the heterostructure, the fresh and easy-to-handle source-gated transistor (SGT) also shows low saturated voltage (V SAT ), promising a low-power-consumption phototransistor.…”