Donor-doped TiO2-based materials are promising
thermoelectrics
(TEs) due to their low cost and high stability at elevated temperatures.
Herein, high-performance Nb-doped TiO2 thick films are
fabricated by facile and scalable screen-printing techniques. Enhanced
TE performance has been achieved by forming high-density crystallographic
shear (CS) structures. All films exhibit the same matrix rutile structure
but contain different nano-sized defect structures. Typically, in
films with low Nb content, high concentrations of oxygen-deficient
{121} CS planes are formed, while in films with high Nb content, a
high density of twin boundaries are found. Through the use of strongly
reducing atmospheres, a novel Al-segregated {210} CS structure is
formed in films with higher Nb content. By advanced aberration-corrected
scanning transmission electron microscopy techniques, we reveal the
nature of the {210} CS structure at the nano-scale. These CS structures
contain abundant oxygen vacancies and are believed to enable energy-filtering
effects, leading to simultaneous enhancement of both the electrical
conductivity and Seebeck coefficients. The optimized films exhibit
a maximum power factor of 4.3 × 10–4 W m–1 K–2 at 673 K, the highest value
for TiO2-based TE films at elevated temperatures. Our modulation
strategy based on microstructure modification provides a novel route
for atomic-level defect engineering which should guide the development
of other TE materials.