Printed wire interconnection using Ag sinter paste for wide band gap power semiconductors

Noh, Seungjun; Choe, Chanyang; Chen, Chuantong; Zhang, Hao; Suganuma, Katsuaki

doi:10.1007/s10854-018-9664-1

Cited by 8 publications

(2 citation statements)

References 28 publications

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“…The formation of an oxide layer was prevented by the use of Ti and Pt barrier layers. However, voids appeared in the Ti/Ag metallization after HTS test for 500 h. The formation of voids in the Ag metallization was attributed to Ag atoms’ diffusion from metallization to the Ag porous network [21]. In addition, micro voids were observed in the bonding joint with Ni/Pd/Pt/Ag metallization, which was caused by excessive Ag grain growth and the related coarsening of porous structure.…”

Section: Resultsmentioning

confidence: 99%

Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

2018

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In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiCp) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sintered Ag joints. The use of SiCp in the bonding structures prevented the morphological evolution of the microporous structure and maintained a stable structure after high temperature storage (HTS) tests, which reduces the risk of void formation and metallization dewetting. In addition to the Ag paste, on the side of direct bonded copper (DBC) substrates, the thermal reliability of various surface metallizations such as Ni, Ti, and Pt were also evaluated by cross-section morphology and on-resistance tests. The results indicated that Ti and Pt diffusion barrier layers played a key role in preventing interfacial degradations between sintered Ag and Cu at high temperatures. At the same time, a Ni barrier layer showed a relatively weak barrier effect due to the generation of a thin Ni oxide layer at the interface with a Ag plating layer. The changes of on-resistance indicated that Pt metallization has relatively better electrical properties compared to that of Ti and Ni. Ag metallization, which lacks barrier capability, showed severe growth in an oxide layer between Ag and Cu, however, the on-resistance showed fewer changes.

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Section: Resultsmentioning

confidence: 99%

Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

2018

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“…Since these WBG semiconductors have superior properties, kind of a wide band gap (>3 eV), a high critical electric field (>3 MV/cm) and a high saturation velocity (>2 × 10 7 cm/s), SiC and GaN can enable to overcome the ultimate performances reached by silicon (Si) based devices, in terms of power conversion efficiency [3]. In addition, WBG semiconductor devices can be operating much higher temperatures (>250 °C) than Si based devices (<150 °C) [4,5,6,7,8], this means massive, complex and heavy cooling systems can be eliminated from power conversion systems. Inverters and converters automotive components can be change to smaller by the simply heat dissipation design of in the high temperature environments [9].…”

Section: Introductionmentioning

confidence: 99%

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

et al. 2019

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This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

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Pressureless sintering multi-scale Ag paste by a commercial vacuum reflowing furnace for massive production of power modules

Yan

Mei

et al. 2019

J Mater Sci: Mater Electron

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Printed wire interconnection using Ag sinter paste for wide band gap power semiconductors

Cited by 8 publications

References 28 publications

Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

Heat-Resistant Microporous Ag Die-Attach Structure for Wide Band-Gap Power Semiconductors

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

Pressureless sintering multi-scale Ag paste by a commercial vacuum reflowing furnace for massive production of power modules

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