By altering the concentration of silicate (SiO 3 2-) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO 3 2-made KDP crystals tapering in conventional cooling method, while more SiO 3 2-induced inclusions at prismatic sectors in the rapid growth method. Laser-polarization-interference results showed that SiO 3 2-extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO 3 2-on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO 3 2-was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO 3 2-absorption on (100) face.