Probe and control of the reservoir density of states in single-electron devices

Möttönen, Mikko; Tan, Kuan Yen; Chan, KW; Zwanenburg, Floris A.; Lim, Wee Han; Escott, Christopher C.; Pirkkalainen, Juha-Matti; Morello, Andrea; Yang, C. H.; Donkelaar, Jessica A. van; Alves, Andrew; Jamieson, David N.; Hollenberg, Lloyd C. L.; Dzurak, A. S.

doi:10.1103/physrevb.81.161304

Cited by 26 publications

(29 citation statements)

References 31 publications

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“…A drawback of the hydrogen-resist technique is that the electronic coupling to the contacted object cannot be tuned much once the device has been fabricated [7,8,10]. Moreover, the reduced dimensionality of the contacts and the random arrangement of dopants within the patterned regions lead to a peaked density of states (DOS), which can affect cryogenic transport measurements such as bias spectroscopy in the Coulomb-blockade (CB) regime [11][12][13]. It is thus important to understand how the geometry, separation and width of such degenerately doped contacts affect electrical transport.…”

Section: Introductionmentioning

confidence: 99%

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

et al. 2016

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A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with n-type doping by phosphine. The four contacts have different separations (d = 9, 12, 16 and 29 nm) to the central 6 nm × 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation d. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. We show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum.

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Section: Introductionmentioning

confidence: 99%

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

et al. 2016

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“…A more detailed study of this quasi-one-dimensional DOS in narrow MOS structures can be found in Ref. 17. The results in Fig.…”

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confidence: 95%

“…16 Very recently, an efficient technique to probe and control the reservoir density of states has been developed. 17 Here, we use this method to pinpoint the origin of the resonant tunneling features in our device. Figures 3͑a͒ and 3͑c͒ show bias spectroscopy data for the 0-1 transition of the dot at B ʈ = 4 T and 7 T. The shift of the charge transitions in gate space compared to Fig.…”

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confidence: 99%

Observation of the single-electron regime in a highly tunable silicon quantum dot

Lim

Zwanenburg

Huebl

et al. 2009

Applied Physics Letters

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“…In particular, the barrier gate voltage (V BG ) can be used to tune the donor electrochemical potentials into resonance with those of the source and drain reservoirs, inducing electron transport. The electron density in the source and drain reservoirs can be tuned in situ by the top gate voltage (V TG ), 18 while the lithographic width of the barrier gate influences the width, and therefore the transparency, of the tunnel barriers between donor and reservoirs. The excitation spectrum of the donor and its magnetic field dependence extracted from the transport measurements provide important information on electronic properties of donors in close proximity to gate electrodes and induced electron layers.…”

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confidence: 99%

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

et al. 2009

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We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.

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Probe and control of the reservoir density of states in single-electron devices

Cited by 26 publications

References 31 publications

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

Observation of the single-electron regime in a highly tunable silicon quantum dot

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

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