Ultrathin metal oxides
prepared by atomic layer deposition (ALD)
have gained utmost attention as moisture and thermal stress barrier
layers in perovskite solar cells (PSCs). We have recently shown that
10 cycles of ALD Al2O3 deposited directly on
top of the CH3NH3PbI3–xClx perovskite material, are effective
in delivering a superior PSC performance with 18% efficiency (compared
to 15% of the Al2O3-free cell) with a long-term
humidity-stability of more than 60 days. Motivated by these results,
the present contribution focuses on the chemical modification which
the CH3NH3PbI3–xClx perovskite undergoes upon growth
of ALD Al2O3. Specifically, we combine in situ
Infrared (IR) spectroscopy studies during film growth, together with
X-ray photoelectron spectroscopy (XPS) analysis of the ALD Al2O3/perovskite interface. The IR-active signature
of the NH3+ stretching mode of the perovskite
undergoes minimal changes upon exposure to ALD cycles, suggesting
no diffusion of ALD precursor and co-reactant (Al(CH3)3 and H2O) into the bulk of the perovskite. However,
by analyzing the difference between the IR spectra associated with
the Al2O3 coated perovskite and the pristine
perovskite, respectively, changes occurring at the surface of perovskite
are monitored. The abstraction of either NH3 or CH3NH2 from the perovskite surface is observed as
deduced by the development of negative N–H bands associated
with its stretching and bending modes. The IR investigations are corroborated
by XPS study, confirming the abstraction of CH3NH2 from the perovskite surface, whereas no oxidation of its inorganic
framework is observed within the ALD window process investigated in
this work. In parallel, the growth of ALD Al2O3 on perovskite is witnessed by the appearance of characteristic IR-active
Al–O–Al phonon and (OH)–Al=O stretching
modes. Based on the IR and XPS investigations, a plausible growth
mechanism of ALD Al2O3 on top of perovskite
is presented.