Probing and wire bonding of aluminum capped copper pads

Hotchkiss, G. B.; Aronoff, J.; Brož, Jan; Hartfield, Cheryl; James, R.; Stark, L.; Subido, W.; Sundararaman, V.; Test, H.

doi:10.1109/relphy.2002.996626

Cited by 4 publications

(1 citation statement)

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“…A Cu top layer, on the other hand, does not provide a reliable bond-wire connection due to excessive Cu oxidation [12]. Cu-interconnect schemes must therefore either include an Al-cap covering the bond pads [12], [13], or that top metal layer of the Cu-interconnect stack must be an Al layer [7]. The Al-cap is typically applied after deposition of the dielectric passivation layer and the opening of the bond pads, i.e., at the end of the chip fabrication process.…”

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Saddle Add-On Metallization for RF-IC Technology

Burghartz

Rejaei

Schellevis

2004

IEEE Trans. Electron Devices

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Abstract-A cost-effective add-on process module for reducing ohmic losses of radio-frequency (RF) inductors and interconnects in RF/BiCMOS and RF/CMOS technologies built on CMOS logic processes is proposed. The module is based on the local thickening of the top metal layer of the thin CMOS interconnects through copper (Cu) electroplating in selected areas. The combination of dense Cu-interconnects in the CMOS logic sections, of thick Cu top-level wiring through local Cu electroplating in the RF sections, and of aluminum (Al) capping of the bond pads provides an optimum tradeoff between packaging requirements, quality of passive components and interconnects, and cost. A special wet-etch process sequence for removal of the Cu-seed and adhesion films from the exposed top metal layer is described. A record quality factor of 13 for a 10-nH inductor on a conventional 5--cm silicon substrate is demonstrated.

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confidence: 99%