2019
DOI: 10.1016/j.jphotochem.2019.111894
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Probing charge transfer processes at p-GaAs electrodes under weak optical excitation

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Cited by 2 publications
(3 citation statements)
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“…In the case of optically pumped p-GaAs, we find a relative spin-dependent charge transfer rate difference (eqn ( 6)) of only 2 to 5%, with a possible complication due to the presence of surface states. 38 When using Al5 chiral molecules, we have found a strong spin dependence, indicating a spin-polarization after passing the chiral molecules of 6 to 19%, which is consistent with the idea that chiral molecules act as spin filters.…”
Section: Discussionsupporting
confidence: 86%
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“…In the case of optically pumped p-GaAs, we find a relative spin-dependent charge transfer rate difference (eqn ( 6)) of only 2 to 5%, with a possible complication due to the presence of surface states. 38 When using Al5 chiral molecules, we have found a strong spin dependence, indicating a spin-polarization after passing the chiral molecules of 6 to 19%, which is consistent with the idea that chiral molecules act as spin filters.…”
Section: Discussionsupporting
confidence: 86%
“…This dark process is likely to originate from the valence band, with a hole transfer mediated by surface states. 38 A laser light power of 80 mW was chosen to maximize the current while staying away from the diffusion-limited regime.…”
Section: Cyclic Voltammetrymentioning
confidence: 99%
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