Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

Gao, Li

doi:10.2478/gpe-2014-0002

Cited by 10 publications

(5 citation statements)

References 181 publications

(382 reference statements)

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“…In weakly interacting graphene/metal systems, multiple different graphene domains with varied moirépatterns coexist. 39,40 We have observed different graphene domains on our graphene/Ir(111) sample surface (see Supplementary Figure S2). Interestingly, we find that the transition between the molecular arrangement with vacancies and the one without vacancies always occurs at the boundaries between different domains on the underlying graphene/Ir(111) surface (see Supplementary Figure S3).…”

Section: Resultsmentioning

confidence: 90%

Strongly Interacting C₆₀/Ir(111) Interface: Transformation of C₆₀ into Graphene and Influence of Graphene Interlayer

et al. 2015

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The adsorption, electronic structure, and thermodynamics of C60 molecules on Ir(111) and graphene/Ir(111) surfaces have been investigated by combining scanning tunneling microscopy and spectroscopy as well as density functional theory calculations. C60 is found to interact strongly with the Ir surface, leading to a spontaneous formation of graphene on the Ir surface at elevated temperatures. The introduction of a graphene interlayer at the C60/Ir(111) interface dramatically affects the interface properties, including the formation of larger molecular islands, improvement in ordering of molecular arrangements, suppression of charge transfer between C60 and Ir, and thermal desorption of C60 from the surface without decomposition or polymerization. We also find that C60 is an effective solid precursor for preparing small-sized graphene quantum dots as well as graphene layers on the Ir surface.

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Section: Resultsmentioning

confidence: 90%

Strongly Interacting C₆₀/Ir(111) Interface: Transformation of C₆₀ into Graphene and Influence of Graphene Interlayer

et al. 2015

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“…It is worth mentioning that the electron scattering induced by doping defects was observed in STM measurements of N-doped single layer graphene on the SiO 2 , Cu, , SiC, , and graphene/SiC surfaces. However, such electron scattering was not observed in our STM measurements of N-doped single layer graphene on Ru(0001), which can be ascribed to the disturbance induced by the strong interfacial interaction between graphene and Ru. − …”

mentioning

confidence: 71%

Controlled Synthesis of Nitrogen-Doped Graphene on Ruthenium from Azafullerene

Fei

Neilson

et al. 2017

Nano Lett.

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The controlled synthesis of high-quality nitrogen (N) doped single layer graphene on the Ru(0001) surface has been achieved using the N-containing sole precursor azafullerence (CNH). The synthesis process and doping properties have been investigated on the atomic scale by combining scanning tunneling microscopy and X-ray photoelectron spectroscopy measurements. We find for the first time that the concentration of N-related defects on the N-doped graphene/Ru(0001) surface is tunable by adjusting the dosage of sole precursor and the number of growth cycles. Two primary types of N-related defects have been observed. The predominant bonding configuration of N atoms in the obtained graphene layer is pyridinic N. Our findings indicate that the synthesis from heteroatom-containing sole precursors is a very promising approach for the preparation of doped graphene materials with controlled doping properties.

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“…Moreover, they can be used to identify the close relations between the electronic energy spectra and the orbital hybridizations of the chemical bonds. To date, such experimental measurements have been successfully used to confirm the electronic band structure near the Fermi level and the dimension-diversified van Hove singularities in monolayer graphene 64 and few-layer graphene systems 65–67 , 1D graphene nanoribbons 68,69 , adatom-adsorbed graphene 70 , monolayer silicene 71 , and hydrogenated silicene 72 . Obviously, the theoretical predictions on the halogen-diversified DOSs can be thoroughly affirmed by the STS experiments, including the vanishing or existing of the finite value of DOSs at the Fermi level, the Si- or halogen-dominated strong peaks, and the halogen-modified σ shoulder structures.…”

Section: Resultsmentioning

confidence: 99%

Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene

Nguyen

Tran

Chiu

et al. 2019

Sci Rep

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Diverse magnetic and electronic properties of halogen-adsorbed silicene are investigated by the first-principle theoretical framework, including the adatom-diversified geometric structures, atom-dominated energy bands, spatial spin density distributions, spatial charge density distributions and its variations, and orbital-projected density of states. Also, such physical quantities are sufficient to identify similar and different features in the double-side and single-side adsorptions. The former belongs to the concentration-depended finite gap semiconductors or p-type metals, while the latter display the valence energy bands with/without spin-splitting intersecting with the Fermi level. Both adsorption types show the halogen-related weakly dispersed bands at deep energies, the adatom-modified middle-energy σ bands, and the recovery of low-energy π bands during the decrease of the halogen concentrations. Such feature-rich band structures can be verified by the angle-resolved photoemission spectroscopy experiment.

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Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

Cited by 10 publications

References 181 publications

Strongly Interacting C₆₀/Ir(111) Interface: Transformation of C₆₀ into Graphene and Influence of Graphene Interlayer

Strongly Interacting C₆₀/Ir(111) Interface: Transformation of C₆₀ into Graphene and Influence of Graphene Interlayer

Controlled Synthesis of Nitrogen-Doped Graphene on Ruthenium from Azafullerene

Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene

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Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

Cited by 10 publications

References 181 publications

Strongly Interacting C60/Ir(111) Interface: Transformation of C60 into Graphene and Influence of Graphene Interlayer

Strongly Interacting C60/Ir(111) Interface: Transformation of C60 into Graphene and Influence of Graphene Interlayer

Controlled Synthesis of Nitrogen-Doped Graphene on Ruthenium from Azafullerene

Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene

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Strongly Interacting C₆₀/Ir(111) Interface: Transformation of C₆₀ into Graphene and Influence of Graphene Interlayer

Strongly Interacting C₆₀/Ir(111) Interface: Transformation of C₆₀ into Graphene and Influence of Graphene Interlayer