Slowing nondesirable electron transfer
reactions at metal oxide–dye
interfaces is important for many technologies. In particular, after
an interfacial photoinduced charge separation event at a metal oxide–dye
interface, it is critically important to limit the rate of electron
transfer reactions back to sensitizers and to limit electron transfer
reactions between the electrolyte and the metal oxide. Ruthenium-based
dyes at metal oxide interfaces are widely used in many fields; however,
these dyes often have poor surface insulation resulting in fast recombination
kinetics with transition metal-based redox shuttles (RSs) in an electrolyte.
This work explores two semiconductor surface modification strategies
designed to minimize recombination events of electrons in TiO2 with oxidized RSs using a fluorinated siloxane insulator
(PFTS) and a metal oxide insulator (MgO) with a well-known Ru dye, B11. Additionally, the influence of these treatments on the
rate and duration of photoinduced interfacial charge separation at
the TiO2–dye interface was examined. The TiO2-dye-RS systems were studied via dye-sensitized solar cell
current–voltage curve, incident photon-to-current conversion
efficiency, small modulated photovoltage transient, time-correlated
single-photon counting, and transient absorption spectroscopy measurements.
MgO was found to decrease the rate of the electron transfer reaction
from the metal oxide to the electrolyte, decrease the rate of the
electron transfer reaction to the oxidized dye from TiO2, increase the electron transfer reaction rate from a reduced RS
to an oxidized dye, and decrease the electron injection rate from
the photoexcited dye to TiO2. Interestingly, 1H,1H,2H,2H-perfluorooctyltrimethoxysilane
(PFTS) was found to desirably improve these rates relative to MgO
or untreated TiO2. A model based on electrostatic interactions
is presented to explain the exceptional behavior of PFTS with density
functional theory computational analysis of PFTS supporting this model.