Probing into the optical and electrical properties of hybrid Zn1−xCoxSe thin films

Pawar, Sanjay B.; Chavan, G.T.; Prakshale, V.M.; Jadkar, Sandesh; Kamble, S.S.; Maldar, N. N.; Deshmukh, L. P.

doi:10.1007/s10854-017-8302-7

Cited by 6 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The calculations were made by Tauc Plot (Tekin & Karaduman Er, 2022). Results depended on doping and annealing is in agreement with literature (Pawar et al, 2018). The band gap values in annealed samples were calculated 3.23, 3.28, 3.28, 3.26 and 3.27 eV for ZnO, Zn0.95Ti0.05O, Zn0.90Ti0.10O, Zn0.85Ti0.15O and Zn0.80Ti0.20O, respectively.…”

Section: Resultssupporting

confidence: 82%

Effect of Annealing and Doping Process of the Zn1-xTixO Films

ÇORLU,

TEKİN,

KARADUMAN ER

et al. 2023

Gazi University Journal of Science Part A: Engineering and Innovation

View full text Add to dashboard Cite

In this study, undoped and Ti-doped ZnO thin films grown by SILAR (Successive Ionic Layer Adsorption and Reaction) method were investigated using XRD, SEM, linear absorbance and electrical characterization. The effect of doping ratio was determined changing Ti ratios from 0.05 to 0.20. In addition, the films with the same additive ratio were annealed at 300°C for 15 minutes in nitrogen environment. Thus, the effects of both annealing and doping ratio on the thin films produced were examined in detail. When the current-voltage graphs are examined, it is observed that there is a decrease in the resistance values with doping. The best additive effect was observed for Zn0.90Ti0.10O film and the structures formed after this additive ratio returned to their initial morphology.

show abstract

Section: Resultssupporting

confidence: 82%