Probing nanoscale variations in strain and band structure of 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
 on Au nanopyramids using tip-enhanced Raman spectroscopy

Zhang, Zhongjian; Palma, Alex C. De; Brennan, Christopher J.; Cossio, Gabriel; Ghosh, Rohit; Banerjee, S.; Yu, Edward T.

doi:10.1103/physrevb.97.085305

Cited by 12 publications

(11 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The two well-studied first order Raman modes in TMDCs are in-plane E 2g and out-of-plane A 1g . Using the combination of both experiments and ab initio calculations shows that the in-plane E 2g mode is more sensitive to uni-or bi-axial strain than the out-of-plane A 1g mode [56,60]. TERS reveals similar behavior for multilayer and monolayer TMDCs when probing highly localized strain at the nanoscale.…”

Section: Strain Induced Local Bandgap Modulationmentioning

confidence: 93%

“…The rich variety of second order Raman features in MoS 2 in resonant Raman condition also yields important information about its physical properties and the electronic band structure. Zhang et al performed similar TERS experiments on monolayer MoS 2 deposited on gold nanopyramids and by combining TERS and TEPL they probed the nanoscale variation of the electronic band structure induced by strain [60]. Under resonance excitation, a few of the second order Raman features in MoS 2 were assigned to longitudinal acoustic LA ðÞ and/or transverse acoustic TA ðÞ phonons.…”

Section: Strain Induced Local Bandgap Modulationmentioning

confidence: 99%

“…In MoS 2 , the Raman mode around 420 cm À1 and the 2 LA mode around 450 cm À1 are the results of DRRS processes. Zhang et al observed that together with the shift in peak position of these second order features, the peak intensities are also inhomogeneously modified due to local strain [60]. Their DFT calculations of the phonon dispersion for acoustic branches show that DRRS processes are sensitive to the changes in the momentum and energy conservation constraints that govern which transitions and states in the BZ participate in the resonant interactions.…”

Section: Afm Topography (A) and 2nd Order Derivative Of The Topography (B) Both Topography And 2nd Derivative Images Show Heterogeneous Bmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Rahaman¹,

Zahn²

2022

Recent Developments in Atomic Force Microscopy and Raman Spectroscopy for Materials Characterization

View full text Add to dashboard Cite

Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties, which are different from their bulk counterparts. Due to strong dielectric screening, local heterogeneities such as edges, grain boundaries, defects, strain, doping, chemical bonding, and molecular orientation dictate their physical properties to a great extent. Therefore, there is a growing demand of probing such heterogeneities and their effects on the physical properties of 2D semiconductors on site in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy and Raman spectroscopy, has experienced tremendous progress since its introduction in the early 2000s and is capable of local spectroscopic investigation with (sub-) nanometer spatial resolution. Introducing this technique to 2D semiconductors not only enables us to understand the effects of local heterogeneities, it can also provide new insights opening the door for novel quantum mechanical applications. This book chapter sheds light on the recent progress of local spectroscopic investigation and chemical imaging of 2D semiconductors using TERS. It also provides a basic discussion of Raman selection rules of 2D semiconductors important to understand TERS results. Finally, a brief outlook regarding the potential of TERS in the field of 2D semiconductors is provided.

show abstract

Section: Strain Induced Local Bandgap Modulationmentioning

confidence: 93%

Section: Strain Induced Local Bandgap Modulationmentioning

confidence: 99%

Section: Afm Topography (A) and 2nd Order Derivative Of The Topography (B) Both Topography And 2nd Derivative Images Show Heterogeneous Bmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Rahaman¹,

Zahn²

2022

Recent Developments in Atomic Force Microscopy and Raman Spectroscopy for Materials Characterization

View full text Add to dashboard Cite

show abstract

“…In a reverse view, local strain can also be rationally utilized to generate nanostructures of TMDs with different optoelectronic properties. 70 Recently, TERS and TEPL had been employed to study the influence of intentionally introduced local strain to TMD thin layers. Milekhin et al placed 1L MoS 2 onto periodically arranged Au nanopillars and studied it with TERS (shown in Fig.…”

Section: Applications Of Tip-enhanced Nanoscopy In the Characterisati...mentioning

confidence: 99%

Tip-enhanced nanoscopy of two-dimensional transition metal dichalcogenides: progress and perspectives

Shao

2022

Nanoscale

View full text Add to dashboard Cite

show abstract

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence

Chiout,

Tempez,

Carlier

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro‐ and nano‐scale strain engineering. In this study, an atomic force microscope (AFM) coupled with an optical system is used to perform indentation measurements and tip‐enhanced photoluminescence (TEPL), allowing to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modeled considering the deformation, stress distribution, and strain dependence of the WSSe band structure. An additional TEPL signal is observed that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. The amplification of the signal and its relation to the excitonic funneling effect are discussed in a more comprehensive model. The diffusion caused by Auger recombination against the radiative excitonic decay will also be compared. TEPL is used to examine and comprehend the local physics of 2D semi‐conducting materials subjected to extreme mechanical strain. Chemical vapor deposition‐fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa.

show abstract

Probing nanoscale variations in strain and band structure of MoS2 on Au nanopyramids using tip-enhanced Raman spectroscopy

Cited by 12 publications

References 42 publications

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Tip-enhanced nanoscopy of two-dimensional transition metal dichalcogenides: progress and perspectives

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence

Contact Info

Product

Resources

About