“…Transition metal dichalcogenides (TMDs), such as MoS 2 , MoSe 2 , WS 2 , and WSe 2 , are layered materials with adjustable band gaps. TMDs have been recently studied because their structures can be transformed from bulk (indirect) to layered (direct transition) structures, − affording TMDs with special physical properties that may be useful for fabricating future semiconductor devices. , Because layered structures, nanostructures, and other structures of MoS 2 have interesting electronic and optical properties, − they have been studied by many researchers and applied in next-generation electronic and optoelectronic devices such as optotransistors, − photodetectors, − and batteries. − However, pure MoS 2 exhibits poor photoelectrochemical (PEC) activity because the photogenerated electron–hole pairs rapidly recombine before migrating to the surface for reactions. − Combining MoS 2 -based heterostructures with different semiconductors or metals is an effective method to inhibit electron–hole pair recombination and improve the PEC properties of MoS 2 . For example, CuS, CuO, , and Ag 2 S − have been combined with MoS 2 , and the resulting composites have shown considerable potential for PEC applications.…”