“…Regardless of the underlying inelastic scattering mechanism, increases with decreasing temperature and reaches below roughly , below which it saturates, possibly due to thermal decoupling of the charge carriers at low temperatures. We note that recent work on three-dimensional quasi-epitaxial layers of CsPbBr 3 have reported WL signatures in photoelectric transport with at ( Wang et al., 2020 ), likely limited by the quasi-epitaxial domain size. Figure 4 Phase coherence length Temperature dependence of the charge carrier phase coherence length in the epitaxial CsSnI 3 thin film.…”
Section: Resultsmentioning
confidence: 71%
“…The heteroepitaxy of these perovskite films allows for precise film thicknesses, controllable phase and orientation, integration into quantum wells, and opens the door to quantum transport devices. In fact, perovskite films have been shown to exhibit numerous quantum phenomena at low temperatures, such as superconductivity ( Reyren et al., 2007 ), ferroelectricity ( Cohen, 1992 ), and quantum coherent transport ( Caviglia et al., 2010 ; Herranz et al., 2004 ; Keshavarz et al., 2017 ; Wang et al., 2020 ; Zhang et al., 2021 ), the last of which we show in this paper for epitaxial CsSnI 3 thin films. In particular, we exploit the growth of epitaxial halide perovskite devices to perform low-temperature quantum transport measurements on thin films composed of CsSnI 3 .…”
Summary
Inorganic halide perovskites have emerged as a promising platform in a wide range of applications from solar energy harvesting to computing and light emission. The recent advent of epitaxial thin film growth of halide perovskites has made it possible to investigate low-dimensional quantum electronic devices based on this class of materials. This study leverages advances in vapor-phase epitaxy of halide perovskites to perform low-temperature magnetotransport measurements on single-domain cesium tin iodide (CsSnI
3
) epitaxial thin films. The low-field magnetoresistance carries signatures of coherent quantum interference effects and spin-orbit coupling. These weak anti-localization measurements reveal a micron-scale low-temperature phase coherence length for charge carriers in this system. The results indicate that epitaxial halide perovskite heterostructures are a promising platform for investigating long coherent quantum electronic effects and potential applications in spintronics and spin-orbitronics.
“…Regardless of the underlying inelastic scattering mechanism, increases with decreasing temperature and reaches below roughly , below which it saturates, possibly due to thermal decoupling of the charge carriers at low temperatures. We note that recent work on three-dimensional quasi-epitaxial layers of CsPbBr 3 have reported WL signatures in photoelectric transport with at ( Wang et al., 2020 ), likely limited by the quasi-epitaxial domain size. Figure 4 Phase coherence length Temperature dependence of the charge carrier phase coherence length in the epitaxial CsSnI 3 thin film.…”
Section: Resultsmentioning
confidence: 71%
“…The heteroepitaxy of these perovskite films allows for precise film thicknesses, controllable phase and orientation, integration into quantum wells, and opens the door to quantum transport devices. In fact, perovskite films have been shown to exhibit numerous quantum phenomena at low temperatures, such as superconductivity ( Reyren et al., 2007 ), ferroelectricity ( Cohen, 1992 ), and quantum coherent transport ( Caviglia et al., 2010 ; Herranz et al., 2004 ; Keshavarz et al., 2017 ; Wang et al., 2020 ; Zhang et al., 2021 ), the last of which we show in this paper for epitaxial CsSnI 3 thin films. In particular, we exploit the growth of epitaxial halide perovskite devices to perform low-temperature quantum transport measurements on thin films composed of CsSnI 3 .…”
Summary
Inorganic halide perovskites have emerged as a promising platform in a wide range of applications from solar energy harvesting to computing and light emission. The recent advent of epitaxial thin film growth of halide perovskites has made it possible to investigate low-dimensional quantum electronic devices based on this class of materials. This study leverages advances in vapor-phase epitaxy of halide perovskites to perform low-temperature magnetotransport measurements on single-domain cesium tin iodide (CsSnI
3
) epitaxial thin films. The low-field magnetoresistance carries signatures of coherent quantum interference effects and spin-orbit coupling. These weak anti-localization measurements reveal a micron-scale low-temperature phase coherence length for charge carriers in this system. The results indicate that epitaxial halide perovskite heterostructures are a promising platform for investigating long coherent quantum electronic effects and potential applications in spintronics and spin-orbitronics.
“…136 To this end, the VDW-integration approach allows high-performance contacts to be realized without direct lithography or direct metallization processes on halide perovskite thin films (Figure 11A) to ensure minimum interfacial damage and atomically clean interface (Figure 11B), and thus greatly reducing the contact resistance by 2-3 orders of magnitude (Figure 11C) to allow systematic photoelectrical and magneto transport studies down to cryogenic temperatures. 137 The damage-free integration of high-quality contacts marks an important step toward unraveling the fundamental transport properties of halide perovskites and defining the technical foundation for exploring new physics in this unique class of ''soft-lattice'' materials. Similarly, the VDW-integration approach is also generally applicable for various delicate materials, including organic crystals and molecular monolayers.…”
Section: Vdw Integration Of 2d/3d Heterostructuresmentioning
“…However, in most vdWs contacts, transferring metal electrodes or epitaxial growing 2D metallic materials can only lower the Schottky barrier height, [ 1d,6 ] but it cannot be completely eliminated, due to the inevitable energy difference between the metal work function and the semiconductor electron affinity (or ionization potential). [ 1a,f ] The effective strategy to solve such problems in traditional silicon‐based electronic devices is heavy doping in silicon semiconductors to reduce the Schottky barrier width, thereby enhancing the carrier interface transmission efficiency through tunneling current.…”
The applications of any ultrathin semiconductor device are inseparable from high‐quality metal–semiconductor contacts with designed Schottky barriers. Building van der Waals (vdWs) contacts of 2D semiconductors represents an advanced strategy of lowering the Schottky barrier height by reducing interface states, but will finally fail at the theoretical minimum barrier due to the inevitable energy difference between the semiconductor electron affinity and the metal work function. Here, an effective molecule optimization strategy is reported to upgrade the general vdWs contacts, achieving near‐zero Schottky barriers and creating high‐performance electronic devices. The molecule treatment can induce the defect healing effect in p‐type semiconductors and further enhance the hole density, leading to an effectively thinned Schottky barrier width and improved carrier interface transmission efficiency. With an ultrathin Schottky barrier width of ≈2.17 nm and outstanding contact resistance of ≈9 kΩ µm in the optimized Au/WSe2 contacts, an ultrahigh field‐effect mobility of ≈148 cm2 V−1 s−1 in chemical vapor deposition grown WSe2 flakes is achieved. Unlike conventional chemical treatments, this molecule upgradation strategy leaves no residue and displays a high‐temperature stability at >200 °C. Furthermore, the Schottky barrier optimization is generalized to other metal–semiconductor contacts, including 1T‐PtSe2/WSe2, 1T′‐MoTe2/WSe2, 2H‐NbS2/WSe2, and Au/PdSe2, defining a simple, universal, and scalable method to minimize contact resistance.
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