Probing semiconductor quantum well qubits and associated Shannon entropy using semi-relativistic quantum mechanics
Moletlanyi Tshipa
Abstract:Electron states in GaAs, GaN and AlN quantum wells are studied by solving a semi-relativistic wave equation within the effective mass approximation. The quantum states are in turn used to probe the properties of two-level qubits formed in the different quantum wells at various temperatures. Results indicated that the period of oscillation between the quantum states increases with increasing width of the quantum wells, with AlN having the longest period and shortest for GaAs. Transition rates were also studied,… Show more
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