Probing structural phase transitions of crystalline C60 via resistivity measurements of metal film overlayers

Chang, Chih-Wei; Regan, B. C.; Mickelson, William; Ritchie, R.O.; Zettl, A.

doi:10.1016/j.ssc.2003.08.042

Cited by 9 publications

(5 citation statements)

References 13 publications

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“…Furthermore, the total active area in the polycrystalline C 60 films allowing this interaction to occur is much larger than that in the C 60 single crystals. 11) The profound influence of this novel structural-electronic interaction on M ðTÞ is thus observed in this work.…”

Section: Resultsmentioning

confidence: 59%

“…From these various T-scans, a dramatic change in M ðTÞ is clearly observed again at T % 255 K, which is also an intrinsic hallmark property of the underneath solid C 60 fullerites. Hence, with a much larger contact area for a Au overlayer on top of a C 60 polycrystalline film, the electronic properties of the Au overlayer are strongly coupled with the structural-phase transitions of the underneath C 60 fullerites, and a novel structural-electronic coupling 11) is clearly observed.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Recently, a new idea of probing the structural-phase transitions of crystalline C 60 via resistivity measurements of metallic overlayers has shown that an extraordinary structural-electronic coupling exists at the metal/C 60 interface. 11) The dark electrical conductivity of the metallic overlayer along the interface direction M ðTÞ is very sensitive to the corresponding structural-phase transitions of the underneath C 60 crystal. In this work, the novel structural-electronic interaction is studied by measuring M ðTÞ for a Au overlayer on top of a C 60 polycrystalline film.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Novel Interface Properties of Au Overlayer on Top of C₆₀ Polycrystalline Film

Liao

Chiu

2006

Jpn. J. Appl. Phys.

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From a temperature dependence of the dark electrical conductivity of Au overlayer σM(T) measured along the interface direction on top of a C60 polycrystalline film, a dramatic change in σM is observed at T ≈255 K; σM(T) increases with increasing temperature. As deduced from σM versus 1/T, an activation energy of 200 ±30 meV for T<255 K is much larger than that of 59 ±2 meV for T>255 K. These novel phenomena are explained by structural–electronic interaction on the Au/C60 interface with a change in the properties of the induced surface states due to the rotational order/disorder phase transition.

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Section: Resultsmentioning

confidence: 59%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Novel Interface Properties of Au Overlayer on Top of C₆₀ Polycrystalline Film

Liao

Chiu

2006

Jpn. J. Appl. Phys.

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“…Polystyrene is an excellent insulator with very high resistivity (about 10 16 m). On the contrary, there exists a wide range of data for the resistivity of C 60 , and the highest is about 10 14 m [116][117][118]. More importantly, many elements can be doped into C 60 , which results in a drastic decrease of the resistivity.…”

Section: Tunneling Magnetroresistance and Spin Polarization In Fe 3 Omentioning

confidence: 99%