2007
DOI: 10.1002/adfm.200600865
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Probing the Anisotropic Field‐Effect Mobility of Solution‐Deposited Dicyclohexyl‐α‐quaterthiophene Single Crystals

Abstract: Measuring the anisotropy of the field‐effect mobility provides insight into the correlation between molecular packing and charge transport in organic semiconductor materials. Single‐crystal field‐effect transistors are ideal tools to study intrinsic charge transport because of their high crystalline order and chemical purity. The anisotropy of the field effect mobility in organic single crystals has previously been studied by lamination of macroscopically large single crystals onto device substrates. Here, a t… Show more

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Cited by 57 publications
(50 citation statements)
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“…Recently, they have reported a new acetylenic n-type organic semiconductor: fluoro-substituted phenyleneethynylenes with high performance [36]. Among intrinsic properties of organic semiconductors, the electrical anisotropy of organic materials has attracted much attention [9,[37][38][39][40][41][42][43][44][45][46][47]. The anisotropic effects in rubrene crystals were first observed by Sundar et al in 2004 [9].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, they have reported a new acetylenic n-type organic semiconductor: fluoro-substituted phenyleneethynylenes with high performance [36]. Among intrinsic properties of organic semiconductors, the electrical anisotropy of organic materials has attracted much attention [9,[37][38][39][40][41][42][43][44][45][46][47]. The anisotropic effects in rubrene crystals were first observed by Sundar et al in 2004 [9].…”
Section: Introductionmentioning
confidence: 99%
“…Understanding the anisotropic mobility can assist in controlling the directions of transistor channel relative to reference direction of molecular crystal to obtain the highest charge mobility [50][51][52]. Figs.…”
mentioning
confidence: 99%
“…In these experiments, flexible rubrene and pentacene devices showed mobilities as high as 0.9 and 0.1 cm 2 / Vs, respectively, besides showing no change in performance even with a 6-mm-diameter bend confirming the superior endurance of the patterned single-crystal devices to sufficiently large bending stress without performance degradation [323]. In further extended studies [354], it was noted that the stamped OTS films were particularly not as smooth as a self-assembled OTS monolayers, as the stamped domains were populated with large numbers of approx. 100-nm-tall OTS pillars that facilitated the selective nucleation [356,357].…”
Section: Patterned Deposition Os Crystalsmentioning
confidence: 54%
“…100-nm-tall OTS pillars that facilitated the selective nucleation [356,357]. This, in fact, was further clarified by observing that nucleation started from the base of the rough OTS surface and the crystal grew on the surface of OTS pillars [354]. Having identified this mode of crystal growth, patterning of OS on other rough surfaces was subsequently realized, as expected.…”
Section: Patterned Deposition Os Crystalsmentioning
confidence: 61%
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