Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling

Endicott, J.; Ibáñez, J.; Patanè, A.; Eaves, L.; Bissiri, M.; Hopkinson, M.; Airey, R.; Hill, G.; Gollub, D.; Forchel, A.

doi:10.1016/j.physe.2003.11.145

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2011

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“…In order to improve the optical quality and therefore the performance of the GaInNAs-based optoelectronics devices, it is fundamental to discover, investigate and eventually minimize the presence of defects inside the material. The presence of defects is probed by several techniques such as deep level transient spectroscopy (DLTS) [2] optically detected magnetic resonance (ODMR) [3], and Photo-Induced Current Transient Spectroscopy (PICTS) [4,5].…”

Section: Introductionmentioning

confidence: 99%

The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

Basak

Erol

Donmez

et al. 2011

Phys. Status Solidi C

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As‐grown and annealed Ga0.6In0.4N0.005As0.995/GaAs with 1, 3, and 7 quantum well structures grown by Molecular Beam Epitaxy (MBE) are investigated using Photoluminescence (PL) and Photo‐Induced Current Transient Spectroscopy (PICTS) measurements in order to determine the effects of the number of quantum wells and thermal annealing on optical properties and qualities of the structures. PICTS results reveal that all the samples with different quantum well numbers have two dominate trap levels which related to GaInNAs layer (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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