Probing the significance of RF magnetron sputtering conditions on the physical properties of CdS thin films for ultra-thin CdTe photovoltaic applications

Marasamy, Latha; Aruna-Devi, R.; Robledo, Oscar Iván Domínguez; Carvayar, José Álvaro Chávez; Barragán, Nicolás Enrique Vázquez; Santos‐Cruz, J.; Mayén-Hernández, S.A.; Contreras‐Puente, G.; Olvera, M. de la L.; Flores, F. de Moure

doi:10.1016/j.apsusc.2021.151640

Cited by 20 publications

(15 citation statements)

References 77 publications

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“…The optical characterization shows a band gap difference from 3 cycles to 5, 7 and 10, the blue shift in band gap for 3 cycles multilayers is attributed to cubic zinc blende structure in CdS nanoparticles, after and Tauc plot are presented, is noticeable that with the increase of the number of cycles, increase the film thickness and reduces the optical transmission spectra from 80% a 3 cycles to almost 20% with 10 cycles, the absorption edge is blue shifted, which is seen in the difference in band gap from ~2.90 to ~2.15 eV, that is attributed to electronic disorder induced by CdS nanoparticles phase distribution and graphene oxide intercalation [1], [13]. Theoretical calculations are ongoing to predict the size of CdS nanoparticles based in the absorption coefficient, also Urbach tail will be deduced [14].…”

Section: Resultsmentioning

confidence: 97%

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Tolentino-Hernandez,

Ovando-Rocha,

Ruiz-Perez

et al. 2024

J. Phys.: Conf. Ser.

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In this work graphene oxide/cadmium sulphide [GO/CdS]n multilayer films were obtained onto FTO/SLG substrates by cyclic electrophoretic deposition (EPD) and successive ion layer adsorption and reaction (SILAR) methods, with 3, 5, 7 and 10 cycles. The optical characterization for 3 cycles sample exhibits an optical band gap of ∼2.9 eV due the nanocrystalline nature of CdS, from 5 to 10 cycles a blue shift is observed in the band gap around ∼2.15 eV by the electronic disorder induced by graphene oxide intercalation and the mixture of hexagonal/cubic phases of CdS. Raman spectra shows the longitudinal optical modes LO, 2LO and 3LO, the LO peak position shows a blue shift in comparison to the bulk CdS. The multilayer films of 3 and 5 cycles shows a wide range of photoluminescence emission from 350 to 700 eV, for samples of 7 and 10 cycles a quenching and red shift is observed attributed to the CdS crystals growth with a peak emission at 615 eV from bulk CdS, which make the materials suitable for photovoltaic solar cells and UV-Vis diodes for optoelectronic devices.

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Section: Resultsmentioning

confidence: 97%

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Tolentino-Hernandez,

Ovando-Rocha,

Ruiz-Perez

et al. 2024

J. Phys.: Conf. Ser.

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“…In general, light absorption and generation of charge carriers occur primarily in the depletion region, which is then separated and collected in the respective contacts due to the built‐in electric field. [ 55 ] It is evident from the results that V b and W are increased after the optimization of ZrS 2 . It is essential to mention that the depletion width ( W f ) will grow toward the p‐side of the p–n junction, as shown in Figure 6d, due to the higher carrier concentration of ZrS 2 than the absorbers.…”

Section: Resultsmentioning

confidence: 98%

“…In addition, the generated charge carriers can get transported to the contacts effectively due to the rise in V b . [ 55 ] Thus, the obtained improvement in the solar cell performance can be ascribed to the elevation in the W and V b of the solar cells after the optimization of ZrS 2 .…”

Section: Resultsmentioning

confidence: 99%

“…As a result, most of the charge carriers recombine before being collected at the respective metal contacts, leading to poor solar cell performance. [55,56] Furthermore, the thin ZrS 2 layer may also suffer from weak diode characteristics between the absorber and i-ZnO, providing a high probability of shunting or leakage current generation, which decreases the solar cell performance. [56,57] However, when the thickness of the buffer is very high, a greater number of photons are absorbed in the buffer, and eventually, only a few photons reach the absorber, resulting in the poor generation of charge carriers.…”

Section: Impact Of Thicknessmentioning

confidence: 99%

“…Overall, the optimization results of ZrS 2 have shown that its bandgap does not alter the solar cell performance, while the PCE increased by 0.86%, 0.95%, 0.18%, 1.08%, 1.54% after the optimization of thickness, attributed to the increased built-in potential and suppressed shunting effect at the absorber/ZrS 2 interface. [55,56] Interestingly, the major enhancement in solar cell performance was achieved from its carrier concentration optimization, which resulted from improved conductivity of solar cells due to the degenerate behavior of ZrS 2 above 1E17 cm À3 . [63,64] Moreover, PCE remains unaltered when the defect density is between 1E12 and 1E18 cm À3 .…”

Section: Impact Of Defect Densitymentioning

confidence: 99%

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Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Arockiya-Dass,

Sekar,

Marasamy

2023

Energy Tech

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SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 are emerging as promising light absorbers for thin‐film photovoltaics due to their extraordinary optoelectronic properties. However, improper band alignment with the buffer and large open‐circuit voltage (VOC) deficit limits their power conversion efficiencies (PCE). Therefore, finding a suitable buffer that overcomes these obstacles is crucial. Herein, ZrS2 as an alternative buffer for the aforementioned emerging thin‐film solar cells using SCAPS‐1D is proposed. The important ZrS2 parameters are optimized, including bandgap, thickness, carrier concentration, and defect density. Interestingly, ZrS2 behaves as a degenerate semiconductor at carrier concentrations >1E17 cm−3, improving the conductivity of the solar cells; it also demonstrates a high defect tolerance nature when the defect density lies between 1E12 and 1E18 cm−3. After ZrS2 parameters optimization, the built‐in potential of SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 solar cells is enhanced by 0.2, 0.58, 0.05, 0.42, and 0.3 V, respectively, reducing recombination rate. Upon optimizing absorbers parameters, a PCE > 35% for SnS, Sb2Se3, and CuSb(S,Se)2 while >32% for Cu2SnS3 and Cu2BaSn(S,Se)4 solar cells is accomplished with low VOC loss (≈0.1 V). The absorbers must have high carrier concentration (1E20 cm−3) and low defect density (1E14 cm−3) to achieve these PCEs.

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Thermally Induced Enhancement of Photoresponse in Radio Frequency‐Sputtered CdS Thin‐Film Photodetectors

Manilal,

Nair,

Thoutam

2024

Adv Eng Mater

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This work focuses on understanding the defect‐related electronic transport in cadmium sulfide (CdS) thin films, and finds thermal treatment as an efficient tool to tailor its intrinsic defect charge carrier concentration for optimum visible‐light photodetection performance. The radio frequency (RF)‐sputtered CdS thin‐films show a substantial decrease in measured dark‐current by three orders of magnitude (μA to nA) with an increase in substrate deposition temperature (Ts) from room‐temperature (RT) to a maximum of 400 °C. With increase in Ts, the current conduction behavior changes from Ohmic (at RT) to Schottky‐behavior (Ts ≥ 100–400 °C). The decrease in dark‐current and the crossover from Ohmic to Schottky electronic transport behavior, pointed to a decrease in defect‐density charge carrier concentration, with increased Ts. Additionally, post‐deposition thermal annealing of CdS thin films also is found to result in a similar decrease in dark‐current (μA to nA). The photo‐to‐dark‐current ratio of CdS thin‐film visible‐light photodetectors increased by two‐orders of magnitude, and its dynamic response time decreased by an order of magnitude via. thermal engineering. The thermal‐annealing treatment possibly reduced the defect‐related trap‐sites, which enables a reliable and faster photo‐switching response for CdS thin‐film‐based visible‐light photodetectors.

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Probing the significance of RF magnetron sputtering conditions on the physical properties of CdS thin films for ultra-thin CdTe photovoltaic applications

Cited by 20 publications

References 77 publications

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Thermally Induced Enhancement of Photoresponse in Radio Frequency‐Sputtered CdS Thin‐Film Photodetectors

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Probing the significance of RF magnetron sputtering conditions on the physical properties of CdS thin films for ultra-thin CdTe photovoltaic applications

Cited by 20 publications

References 77 publications

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Theoretical Insights of Degenerate ZrS2 as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Thermally Induced Enhancement of Photoresponse in Radio Frequency‐Sputtered CdS Thin‐Film Photodetectors

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Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells