Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

Aktsipetrov, O.A.; Fedyanin, Andrey A.; Мишина, Е. Д.; Rubtsov, A. N.; Hasselt, C.W. van; Devillers, M.A.C.; Rasing, T.H.M.

doi:10.1016/0039-6028(95)01322-9

Cited by 4 publications

(1 citation statement)

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“…To explain dark edges, other mechanisms should be considered. Such a mechanism can be the electrically induced sec ond harmonic appearing in semiconductors during band bending on the surface or at the interface (elec tric field induced SH, EFISH), observed mostly in centrosymmetric semiconductors (Ge, Si) [24,25], and in non centrosymmetric semiconductors (GaAs) [26]. The EFISH phenomenon observed in the pres ence of electric field E 0 in the semiconductor surface region consists in the contribution added to the nonlin ear optical polarization component, which depends on this field, P 2ω = χ (3) E 0 E ω E ω .…”

Section: Edge Effects In Second Harmonic Generation In Nanoscale Layersmentioning

confidence: 99%

Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides

et al. 2015

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791Transition metal dichalcogenides (MoS 2 , WS 2 , and others) are considered as materials of two dimen sional electronics, which can complement graphene in developing nanoelectronic devices. In contrast to graphene which has no band gap, two dimensional layered dichalcogenides have a band gap E g ~ 1.2-1.4 eV [1], transforming from indirect gap bulk semi conductors to direct gap ones [2,3]. Thus, varying the layer thickness, the most important material parame ters, i.e., optical transitions, conductivity, electron mobility, electron relaxation parameters, and others can be controllably varied [4]. Size effects appear in the band structure of transition metal dichalcogenides (TMDs) at thicknesses from one monolayer to 5-7 layers; therefore, thicker nanoscale TMD films are considered as bulk materials.Abstract-The results of studying the optical properties of nanoscale single crystals of MoS 2 :Cl 2 and WS 2 :Br 2 semiconductor compounds are presented. In microscopic images obtained at the wavelength of the second (400 nm), edge effects are detected, which consist in enhancement or reduction in the second harmonic sig nal intensity. Unlike previously proposed interference mechanisms of edge effects, non interference mecha nisms are considered. The occurrence of edge effects is associated with either an increased Cl 2 and Br 2 halo gen molecule concentration or with an electrically induced second harmonic caused by band bending at the edges of individual crystal layers.

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Section: Edge Effects In Second Harmonic Generation In Nanoscale Layersmentioning

confidence: 99%