Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

Vasu, K.I.; Chakraborty, Biswanath; Sampath, S.; Sood, Anil K.

doi:10.1016/j.ssc.2010.05.018

Cited by 66 publications

(37 citation statements)

References 30 publications

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“…The experimental results are consistent with the data published in the literature [15,18]. For both the exfoliated graphene and the reduced graphene oxide, the coefficient of resistance is comparable with the values obtained for the sc-HSMG.…”

Section: Electrical Properties Measurementsupporting

confidence: 90%

High Strength Metallurgical Graphene – Mechanisms of Growth and Properties / Grafen Metalurgiczny O Wysokiej Wytrzymałości – Mechanizmy Wzrostu I Właściwości

Kula

Szymański

Kołodziejczyk

et al. 2015

Archives of Metallurgy and Materials

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In this work, the growth mechanisms of chemical vapor deposited and metallurgical graphene and their selected mechanical and electrical properties were investigated. The study revealed the influence of the growth mechanisms on monoand poly-crystalline nanostructures of synthesized graphene monolayers. The structure of flake boundaries greatly affects both the mechanical and electrical properties. The key factors are overlapping of the graphene flakes, their degree of mismatch and the presence of π type bonds. all of these issues should be taken into account when developing industrially scaled technologies for graphene manufacturing.Keywords: graphene; growth mechanism; electrical properties W pracy przedstawiono wyniki badań mechanizmów wzrostu oraz wybranych właściwości mechanicznych i elektrycznych grafenu chemicznie osadzanego z fazy gazowej oraz grafenu metalurgicznego. badania wykazały wpływ mechanizmów wzrostu na mono-i polikrystaliczne nanostruktury syntetyzowanych monowarstw grafenu. Struktura granic płatków grafenu znacząco wpływa zarówno na właściwości mechaniczne jak i elektryczne. Kluczowymi czynnikami są: nakładanie się płatków grafenu, stopień ich niedopasowania oraz obecność wiązań typu π. Wszystkie te aspekty powinny być brane pod uwagę przy opracowywaniu technologii produkcji grafenu na skalę przemysłową.

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Section: Electrical Properties Measurementsupporting

confidence: 90%

High Strength Metallurgical Graphene – Mechanisms of Growth and Properties / Grafen Metalurgiczny O Wysokiej Wytrzymałości – Mechanizmy Wzrostu I Właściwości

Kula

Szymański

Kołodziejczyk

et al. 2015

Archives of Metallurgy and Materials

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“…Another issue that must be addressed is their high subthreshold swing, typically of several hundreds of millivolts, which impede their sensitivity. A strategy may be to switch from classical OSC to graphene-based materials, e.g., graphene or reduced graphene oxide, which has already been reported [33][34][35][36][37][38][39][40][41][42][43][44][45][46], but this will not be discussed here. Readers who are interested in grapheme-based EGOFETs may report on the review from Yan et al, 2013, which dealt with graphene-based transistors for biological sensors [47].…”

Section: Egofetsmentioning

confidence: 99%

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

2016

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Electrolyte-gated organic field-effect transistors have emerged in the field of biosensors over the last five years, due to their attractive simplicity and high sensitivity to interfacial changes, both on the gate/electrolyte and semiconductor/electrolyte interfaces, where a target-specific bioreceptor can be immobilized. This article reviews the recent literature concerning biosensing with such transistors, gives clues to understanding the basic principles under which electrolyte-gated organic field-effect transistors work, and details the transduction mechanisms that were investigated to convert a receptor/target association into a change in drain current.

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“…The G band represents a first order scattering of E 2g mode, while the D band is the evidence for the presence of defects in the graphite material [26,27]. The last important band is the overtone band of the D band (2D band) which appears at 2705 cm -1 [28]. The stacking order of the graphite layers along the c-axis were assessed by the 2D band, where the intensity of 2D band displays for SLG, BLG and FLG as descending order [29,30].…”

Section: Raman Analysismentioning

confidence: 99%

Improvement of graphene oxide characteristics depending on base washing

Kabel

Farag

Elnaggar

et al. 2015

J. Superhard Mater.

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Improvement of graphene oxide characteristics depending on base washingGraphene oxide (GO) FTIR). Raman spectroscopy analysis identified the defect degree and the transition of graphite from a crystalline to an amorphous structure and vice versa. The interlayer spacings of FLG and GO n were investigated by Xray diffraction (XRD) and the thermal stability of as-received and modified materials were examined by thermal gravimetric analysis (TGA). The morphological structure was characterized by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The various investigations confirmed that the properties of GO were improved by neutralization impact, which may pave the way to new developments in the GO-based applications.

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Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

Abstract: We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO)

Cited by 66 publications

References 30 publications

High Strength Metallurgical Graphene – Mechanisms of Growth and Properties / Grafen Metalurgiczny O Wysokiej Wytrzymałości – Mechanizmy Wzrostu I Właściwości

High Strength Metallurgical Graphene – Mechanisms of Growth and Properties / Grafen Metalurgiczny O Wysokiej Wytrzymałości – Mechanizmy Wzrostu I Właściwości

Electrolytic Gated Organic Field-Effect Transistors for Application in Biosensors—A Review

Improvement of graphene oxide characteristics depending on base washing

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